Publications:
Book
Chapters
- K.
J. Chen
and S. Yang, "Recent
Progress in GaN-on-Si HEMT,"
in HANDBOOK OF GaN SEMICONDUCTOR MATERIALS AND DEVICES, CRC Press, Taylor
& Francis Group, International
Standard
Book Number-13: 978-1-4987-4713-4 (Hardback).
Chapter 11, 2018.
- K.
J. Chen,
"Fluorine-Implanted Enhancement-Mode Transistors" in Power GaN Devices,
Springer International Publishing, ISBN:
978-3-319-43197-0, Chapter 12, pp. 273-293, 2016.
- K.
J. Chen
and L. L. W. Leung, "CMOS-compatible micromachined
edge-suspended planar inductors and coplanar waveguides"
in Si-Based Semiconductor Components for RF Integrated
Circuits, Transworld Research Network, Ed. Will Z. Cai, ISBN: 81-7895-196-7, Chapter
8, pp. 217-242, 2006.
Recent
Journal Papers (2003-present) (Full
List )
2018:
- X.
Tang, B. Li, K. J. Chen, and J. Wang,
"Photocurrent characteristics of metal-AlGaN/GaN
Schottky-on-heterojunction diodes induced by GaN interband
excitation," Appl. Phys. Express,
11, 054101, 2018.
- Q.
Qian, Z. Zhang, and K. J. Chen, "Layer-dependent
second-order Raman intensity of MoS2 and WSe2:
influence of intervalley scattering," Physical Review B,
97, 165409, 2018.
- (Invited
Paper) H. Amano,
et al., "The 2018
GaN power electronics roadmap, "
J. Phys. D: Appl.
Phys. 51 (2018) 163001.
- Q. Qian,
Z. Zhang, and K.
J. Chen, "In Situ Resonant Raman
Spectroscopy to Monitor the Surface Functionalization of
MoS2 and WSe2 for High-k
Integration: A First-Principles Study," Langmuir, 34, pp.
2882-2889, 2018. DOI: 10.1021/acs.langmuir.7b03840.
- M. Hua, Q. Qian, J. Wei, Z.
Zhang, G. Tang, and K. J. Chen, "Bias Temperature Instability of
Normally-Off GaN MIS-FET with Low-Pressure Chemical Vapor
Deposition SiNx Gate Dielectric, " Phys. Status Solidi A, 2018, 1700641, DOI:
10.1002/pssa.201700641.
- J. Lei, J. Wei, G. Tang, Z. Zhang, Q. Qian,
Z. Zheng, Mengyuan, and K. J. Chen,
"650-V Double-Channel Lateral Schottky Barrier Diode with
Dual-Recess Gated Anode," IEEE Electron Device Lett.,
IEEE Electron Device Lett., vol. 39, no.
2, pp. 260-263, Feb. 2018.
- M. Hua, J.
Wei, Q. Bao, Z. Zhang, Z. Zheng, and K. J. Chen,
"Dependence of VTH
Stability on Gate-Bias under Reverse-Bias Stress in E-mode
GaN MIS-FET," IEEE Electron Device Lett., vol. 39,
No. 3, pp. 413-416, 2018, DOI: 10.1109/LED.2018.2791664.
- S. Huang, X. Liu, X. Wang, X. Kang, J. Zhang,
J. Fan, J. Shi, K. Wei, Y. Zheng, H. Gao, Q. Sun, M. Wang,
B. Shen, and K.
J. Chen, "Ultrathin-Barrier AlGaN/GaN
Heterostructure: A Recess-Free Technology for
Manufacturing High-Performance GaN-on-Si Power Devices," IEEE
Trans. Electron Devices, vol. 65, no. 1, pp.
207-214, 2018.
- J. Wei, J. Lei, X. Tang, B. Li, S. Liu, and K. J. Chen,
"Channel-to-Channel Coupling in Normally-Off GaN
Double-Channel MOS-HEMT," IEEE Electron Device Lett.,
vol. 39, no. 1, pp. 59-62, 2018.
- K. Kim, M. Hua, D. Liu, J. Kim, K. J. Chen, and
Z. Ma, "Efficiency enhancement of InGaN/GaN blue
light-emitting diodes with top surface deposition of
AlN/Al2O3," Nano Energy, 43 (2018)
259-269.
2017:
- S. Yang, C. Zhou,
S. Han, J. Wei, K. Sheng, and K. J. Chen,
"Impact of Substrate Bias Polarity on Buffer-Related
Current Collapse in AlGaN/GaN-on-Si Power Devices," IEEE
Trans. Electron Devices, vol. 64, no. 12, pp.
5048-5056, 2017.
- Q. Qian, Z. Zhang, M. Hua,
J. Wei, J. Lei, and K. J. Chen,
"Remote N2 Plasma Treatment to Deposit
Ultrathin High-k Dielectric As Tunneling Contact Layer for
Single-layer MoS2 MOSFET," Appl. Phys. Express,
vol. 10, p. 125201, 2017.
- Z. Zhang, B. Li, Member, Q. Qian,
X. Tang, M. Hua, B. Huang, and K. J. Chen,
"Revealing the Nitridation
Effects on GaN Surface by First-Principles Calculation and
X-Ray/Ultraviolet Photoemission Spectroscopy," IEEE
Trans. Electron Devices,
vol. 64, No.
10, p. 4036-4036, 2017.
- G. Tang, A.
M. H. Kwan, R. K. Y. Wong, J. Lei, R. Y. Su, F. W. Yao, Y.
M. Lin, J. L. Yu, T. Tsai, H. C. Tuan, A. Kalnitsky, and K. J. Chen,
"Digital Integrated Circuits on an E-mode GaN Power HEMT
Platform," IEEE
Elec. Dev. Lett., vol. 38, No.
9, pp. 1282-1285, 2017.
- S. Liu, M. Wang, M.
Tao, R. Yin, J. Gao, H. Sun, W. Lin, C. P. Wen, J. Wang,
W. Wu, Y. Hao, Z. Zhang, K. J. Chen,
and B. Shen, "Gate-Recessed Normally-OFF GaN MOSHEMT
with Improved Channel Mobility and Dynamic Performance
Using AlN/Si3N4 as Passivation and Post Gate-Recess
Channel Protection Layers," IEEE
Elec. Dev. Lett.,
vol. 38, No. 8, pp. 1075-1078, 2017.
- G. Tang, J. Wei, Z.
Zhang, X. Tang, M. Hua, H. Wang, and K. J. Chen,
"Dynamic RON
of GaN-on-Si Lateral Power Devices with a Floating
Substrate Termination," IEEE
Elec. Dev. Lett., vol.
38, No. 7, pp. 937-940, 2017.
- M. Hua, J. Wei,
G. Tang, Z. Zhang, Q. Qian, X. Cai, N. Wang, and K. J. Chen,
"Normally-Off LPCVD-SiNx/GaN MIS-FET with Crystalline
Oxidation Interlayer," IEEE Elec. Dev. Lett.,
vol. 7, No. 38, pp. 929-932, 2017.
- M. Zhang, J. Wei,
H. Jiang, K. J.
Chen, and C. H. Cheng, "A New SiC Trench MOSFET
Structure With Protruded p-Base for Low Oxide Field and
Enhanced Switching Performance," IEEE Trans. Device
and Materials Reliability, vol. 17, No. 2, pp. 432-437,
2017.
- M. Zhang, J. Wei, H.
Jiang, K. J. Chen,
and C. Cheng, "SiC trench MOSFET with self-biased p-shield
for low RON-SP and low OFF-state oxide field," IET
Power Electron., vol. 10, no. 10, No. 10, pp.
1208-1213, 2017.
- J. Wei, M. Zhang, H.
Jiang, H. Wang, and K. J. Chen,
"Dynamic Degradation in SiC Trench MOSFET with a Floating
p-Shield Revealed With Numerical Simulations," IEEE
Trans. Electron Devices, vol. 64, No.
6, pp. 2592-2598, 2017.
- Q. Qian, Z. Zhang, M. Hua, G.
Tang, J. Lei, F. Lan, Y. Xu, R. Yan, and K. J. Chen,
"Enhanced dielectric deposition on single-layer MoS2
with low damage using remote N2 plasma
treatment," Nanotechnology, vol. 28, No. 17, p.
175202, 2017.
- (Invited
Paper) K. J. Chen, O.
Häberlen, A. Lidow, C. L. Tsai, T. Ueda, Y. Uemoto, and Y.
Wu, "GaN-on-Si Power Technology: Devices and
Applications," IEEE Trans.
Electron Devices, vol. 64, No. 3, pp.
779-795, 2017.
- R. Xie,
H. Wang, G. Tang, X. Yang, and K. J. Chen, "An
Analytical Model for False Turn-On Evaluation of
High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg
Configuration," IEEE
Trans. Power Electronics, vol. 32, No. 8, pp.
6416-6488, 2017.
- H. Wang,
J. Wei, R. Xie, C. Liu, G. Tang, and K. J. Chen,
"Maximizing the Performance of 650-V p-GaN Gate HEMTs:
Dynamic RON Degradation and Circuit Design
Considerations," IEEE
Trans. Power Electronics, vol. 32, No. 7, pp.
5539-5549, 2017.
- S. Yang, S. Liu, Y. Lu, and K. J. Chen,
"Trapping mechanisms in insulated-gate GaN power devices:
Understanding and characterization techniques," physica
status solidi (a), vol. 214, p. 1600607, 2017.
2016:
- S. Huang,
X. Liu, X. Wang, X. Kang, J. Zhang, Q. Bao, K. Wei, Y.
Zheng, C. Zhao, H. Gao, Q. Sun, Z. Zhang, and K. J. Chen,
"High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on
Ultra-Thin-Barrier AlGaN/GaN Heterostructure," IEEE Elec. Dev. Lett.,
vol. 37, No. 12, pp. 1617-1620, 2016.
- B. Li, X.
Tang, G. Tang, J. Wei, J. Wang, and K. J. Chen,
"Switching Behaviors of On-Chip Photon Source on
AlGaN/GaN-on-Si Power HEMTs Platform," IEEE Photonics
Technology Lett., vol. 28, pp. 2803-2806, 2016.
- J. Wei,
M. Zhang, H. Jiang, C. Cheng, and K. J. Chen, "Low
ON-Resistance SiC Trench/Planar MOSFET With Reduced
OFF-State Oxide Field and Low Gate Charges," IEEE Elec. Dev. Lett.,
vol. 37, pp. 1458-1461, 2016.
- X. Tang,
B. Li, Z. Zhang, G. Tang, J. Wei, and K. J. Chen,
"Characterization of Static and Dynamic Behaviors in
AlGaN/GaN-on-Si Power Transistors With Photonic-Ohmic
Drain," IEEE Trans.
Electron Devices, vol. 63, pp.
2831-2837, 2016.
- Q. Qian,
B. Li, M. Hua, Z. Zhang, F. Lan, Y. Xu, R. Yan, and K. J. Chen,
"Improved Gate Dielectric Deposition and Enhanced
Electrical Stability for Single-Layer MoS2
MOSFET with an AlN Interfacial Layer," Scientific Reports,
vol. 6, p. 27676, 2016.
- J. Wei,
H. Jiang, Q. Jiang, and K. J. Chen,
"Proposal of a GaN/SiC Hybrid Field-Effect Transistor for
Power Switching Applications," IEEE Trans. Electron
Devices, vol. 63, pp. 2469-2473, 2016.
- (Feature
Article) K. J. Chen, S.
Yang, S. Liu, C. Liu, and M. Hua, "Toward reliable MIS-
and MOS-gate structures for GaN lateral power devices," Phys. Status Solidi A,
vol. 213, pp. 861-867, 2016.
- M. Hua,
Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen,
"Compatibility of AlN/SiNx Passivation With LPCVD-SiNx
Gate Dielectric in GaN-Based MIS-HEMT," IEEE Elec. Dev.
Lett., vol. 37, No. 3, pp. 265-268, 2016.
- (Invited
Article) B. Li,
X. Tang, J. Wang, and K. J. Chen,
"Optoelectronic Devices on AlGaN/GaN HEMT Platform, " Phys. Status Solidi A,
vol. 213, No. 5, pp. 1213-1221, 2016.
- X. Tang,
B. Li, Y. Lu, and K.
J. Chen, "On-chip Addressable
Schottky-on-Heterojunction Light-Emitting Diode Arrays on
AlGaN/GaN-on-Si Platform, " Phys. Status Solidi C,
vol. 13, No. 5-6, pp. 365-368, 2016.
- S. Yang,
Y. Lu, H. Wang, S. Liu, C. Liu, and K. J. Chen,
"Dynamic Gate Stress-Induced VTH
Shift and Its Impact on Dynamic RON in
GaN MIS-HEMTs," IEEE
Elec. Dev. Lett., vol. 37, pp. 157-160, 2016.
- S. Yang,
S. Liu, C. Liu, M. Hua, and K. J. Chen,
"Gate Stack Engineering for GaN Lateral Power Transistors, " Semicond. Sci.
Technol. 31, 024001,
2016.
2015:
- J. Wei,
S. Liu, B. Li, X. Tang, Y. Lu, C. Liu, M. Hua, Z. Zhang,
G. Tang, and K. J. Chen,
"Low On-Resistance Normally-Off GaN Double-Channel
Metal-Oxide-Semiconductor High-Electron-Mobility
Transistor, " IEEE
Elec. Dev. Lett., vol. 36, No. 12, pp. 1287-1290,
2015.
- M. Hua,
C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang, and K. J. Chen,
"Characterization
of Leakage and Reliability of SiNx Gate
Dielectric by Low-Pressure Chemical Vapor Deposition for
GaN-based MIS-HEMTs, " IEEE Trans.
Electron Devices, vol. 62, No. 10, pp. 3215-3222,
2015.
- X. Wang,
J. Xu, Z. Wang, K.
J. Chen, X. Wu, Z. Wang, P. Yang, and L. H. K.
Duong, "An Analytical Study of Power Delivery Systems for
Many-Core Processors Using On-Chip and Off-Chip Voltage
Regulators, " IEEE
Trans. Computer-Aided Design Of Integrated Circuits And
Systems, vol. 34, No. 9, pp. 1401-1414, 2015.
- C. Zhang,
M. Wang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu, K. J. Chen, and
B. Shen, "Temperature Dependence of the Surface- and
Buffer-Induced Current Collapse in GaN High-Electron
Mobility Transistors on Si Substrate, " IEEE Trans. Electron
Devices, vol. 62, NO. 8,
pp. 2475-2480, 2015.
- H. Wang,
C. Liu, Q. Jiang, Z. Tang, and K. J. Chen,
"Dynamic Performance of AlN-Passivated AlGaN/GaN MIS-High
Electron Mobility Transistors Under Hard Switching
Operation, " IEEE
Elec. Dev. Lett., vol. 36, No. 8, pp. 760-762, 2015.
- S. Lin,
M. Wang, B. Xie, C. P. Wen, M. Yu, J. Wang, Y. Hao, W. Wu,
S. Huang, K. J.
Chen, and B. Shen, "Reduction of Current Collapse in
GaN High-Electron Mobility Transistors Using a Repeated
Ozone Oxidation and Wet Surface Treatment, " IEEE Elec. Dev. Lett.,
vol. 36, No. 8, pp. 757-759, 2015.
- S. Huang,
X. Liu, J. Zhang, K. Wei, G. Liu, X. Wang, Y. Zheng, H.
Liu, Z. Jin, C. Zhao, C. Liu, S. Liu, S. Yang, J. Zhang,
Y. Hao, and K. J.
Chen, "High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN
MIS-HEMTs Fabricated With High-Temperature Gate-Recess
Technique, " IEEE
Elec. Dev. Lett., vol. 36, No. 8, pp. 754-756, 2015.
- S. Yang,
S. Liu, Y. Lu, C. Liu, and K. J. Chen,
"AC-Capacitance Techniques for Interface Trap Analysis in
GaN-Based Buried-Channel MIS-HEMTs, " IEEE Trans. Electron
Devices, vol. 62, No. 6, pp. 1870-1878, 2015.
- Y. Lu, Q.
Jiang, Z. Tang, S. Yang, C. Liu, and K. J. Chen, "Characterization
of SiNx/AlN passivation stack with epitaxial
AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced
atomic layer deposition, " Appl. Phys. Express 8,
064101, 2015.
- H. Wang,
A. M. Kwan, Q. Jiang, and K. J. Chen, "A
GaN Pulse Width Modulation Integrated Circuit for GaN
Power Converters, " IEEE
Trans. on Electron Devices, vol. 62, No. 4, pp.
1143-1149, 2015.
- B. Li, X.
Tang, and K. J.
Chen, "Optical pumping of deep traps in
AlGaN/GaN-on-Si HEMTs using an on-chip
Schottky-on-heterojunction light-emitting diode, " Appl. Phys. Lett.,
106(9), 093505, 2015.
- M. Hua,
C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B. Zhang,
and K. J. Chen,
"GaN-Based
Metal-Insulator-Semiconductor High-Electron-Mobility
Transistors Using Low Pressure Chemical Vapor
Deposition Silicon Nitride (LPCVD-SiNx) as
Gate Dielectric," IEEE Elec. Dev. Lett.,
vol. 36, No. 5, pp. 448-450, 2015.
- Y. Lu, B.
Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen,
"Normally OFF Al2O3-AlGaN/GaN
MIS-HEMT With Transparent Gate Electrode for Gate
Degradation Investigation, " IEEE Trans. Electron
Devices, vol. 62, No. 3, pp. 821-827, 2015.
- S. Liu,
S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, B. Shen, and
K. J. Chen,
"Interface/border trap characterization of Al2O3/AlN/GaN
metal-oxide-semiconductor structures with an AlN
interfacial layer, " Appl. Phys. Lett.,
106(5), 051605, 2015.
- C. Liu,
S. Yang, S. Liu, Z. Tang, H. Wang, Q. Jiang, and K. J. Chen,
"Thermally Stable Enhancement-Mode GaN
Metal-Insulator-Semiconductor High-Electron-Mobility
Transistor With Partially Recessed Fluorine-Implanted
Barrier, " IEEE
Elec. Dev. Lett., vol. 36, No. 4, pp. 318-320, 2015.
- S. Huang,
X. Liu, K. Wei, G. Liu, X. Wang, B. Sun, X. Yang, B. Shen,
C. Liu, S. Liu, M. Hua, S. Yang, and K. J. Chen, "O3-sourced
atomic layer deposition of high quality Al2O3
gate dielectric for normally-off GaN
metal-insulator-semiconductor high-electron-mobility
transistors, " Appl.
Phys. Lett., 106(3), 033507, 2015.
2014:
- S. Yang,
S. Liu, C. Liu, Y. Lu, and K. J. Chen,
"Mechanisms of thermally induced threshold voltage
instability in GaN-based heterojunction transistors," Appl. Phys. Lett.,
105(22), 223508, 2014.
- (Invited) K. J. Chen, S.
Yang, Z. Tang, S. Huang, Y. Lu, Q. Jiang, S. Liu, C. Liu,
and B. Li, "Surface nitridation for improved
dielectric/III-nitride interfaces in GaN MIS-HEMTs, "
Phys. Stat. Sol. (a), vol. 212, No. 5, pp. 1059-1065,
2015.
- Q. Jiang,
Z. Tang, C. Zhou, S. Yang, and K. J. Chen,
"Substrate-Coupled Cross-Talk Effects on an
AlGaN/GaN-on-Si Smart Power IC Platform," IEEE Trans.
on Electron Devices, vol. 61, No. 11,
pp. 3808-3813, 2014.
- A. M.
Kwan, Y. Guan, X. Liu, and K. J. Chen, "A
Highly Linear Integrated Temperature Sensor on a GaN Smart
Power IC Platform," IEEE Trans. on Electron Devices,
vol. 61,
No. 8, pp. 2970-2976, 2014.
- Z. Tang,
S. Huang, X. Tang, B. Li, and K. J. Chen,
"Influence of AlN Passivation on Dynamic ON-Resistance and
Electric Field Distribution in High-Voltage
AlGaN/GaN-on-Si HEMTs," IEEE Trans. on Electron
Devices, vol. 61, No. 8, pp.
2785-2792, 2014.
- B. Li, X.
Tang, J. Wang, and K.
J. Chen, "P-doping-free III-nitride high electron
mobility light-emitting diodes and transistors," Appl.
Phys. Lett., 105(3), 032105, 2014.
- S. Liu,
S. Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, "Al2O3/AlN/GaN
MOS-Channel-HEMTs With an AlN Interfacial Layer," IEEE
Elec. Dev. Lett., vol. 35, No. 7, pp.
723-725, 2014.
- M. Wang, Y.
Wang, C. Zhang, B. Xie, C. P. Wen, J. Wang, Y. Hao, W. Wu,
K. J. Chen,
and B. Shen, "900 V/1.6 mΩ.cm2 Normally Off Al2O3/GaN
MOSFET on Silicon Substrate," IEEE Trans. on Electron
Devices, vol. 61, No. 6,
pp. 2035-2040, 2014.
- Q. Jiang,
Z. Tang, C. Liu, Y. Lu, and K. J. Chen, "A
High-Voltage Low-Standby-Power Startup Circuit Using
Monolithically Integrated E/D-Mode AlGaN/GaN MIS-HEMTs, "
IEEE Trans. on Electron Devices, vol. 61, No. 3, pp.
762-768, 2014.
- A. Zhang,
L. Zhang, Z. Tang, X. Cheng, Y. Wang, K. J, Chen, and
M. Chan, "Analytical Modeling of Capacitances for GaN
HEMTs, Including Parasitic Components, " IEEE Trans.
on Electron Devices, vol. 61, No. 3, pp.
755-761, 2014.
- S. Huang,
K. Wei, G. Liu, Y. Zheng, X. Wang, L. Pang, X. Kong, X.
Liu, Z. Tang, S. Yang, Q. Jiang, and K. J. Chen,
"High- fMAX
High Johnson's
Figure-of-Merit 0.2-um Gate AlGaN/GaN HEMTs on Silicon
Substrate With AlN/SiNx Passivation, " IEEE
Elec. Dev. Lett., vol. 35, No. 3, pp.
315-317, 2014.
- C. Liu,
S. Liu, S. Huang, B. Li, and K. J. Chen,
"AlN/GaN heterostructure TFTs with plasma enhanced atomic
layer deposition of epitaxial AlN thin film," Physica
Status Solidi (C), vol. 11, No. 3-4,
pp. 953-956, 2014
- B. Li, Q.
Jiang, S. Liu, C. Liu, and K. J. Chen,
"Degradation of transient OFF-state leakage current in
AlGaN/GaN HEMTs induced by ON-state gate overdrive," Physica
Status Solidi (C), vol. 11, No. 3-4,
pp. 928-931, 2014.
- S. Yang,
Q. Jiang, B. Li, Z. Tang, and K. J. Chen,
"GaN-to-Si vertical conduction mechanisms in
AlGaN/GaN-on-Si lateral heterojunction FET structures, " Physica
Status Solidi (C), vol. 11 No. 3-4,
pp. 949-952, 2014.
- (Invited)
K. J. Chen, A. M.
H. Kwan, and Q. Jiang, "Technology for III-N heterogeneous
mixed-signal electronics," Physica Status Solidi (a),
vol. 211,
No. 4, pp. 769-774, 2014.
- S. Yang,
C. Zhou, Q. Jiang, J. Lu, B. Huang, and K. J. Chen,
"Investigation of buffer traps in AlGaN/GaN-on-Si devices
by thermally stimulated current spectroscopy and
back-gating measurement," Appl. Phys. Lett., 104(1),
013504, 2014.
- Q. Zhou,
S. Yang, W. Chen, B. Zhang, Z. Feng, S. Cai, and K. J. Chen,
"High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain
for RF power applications," Solid-State Electronics,
vol. 91,
pp. 19-23, 2014.
2013:
- S. Yang, Z. Tang, K. -Y. Wong, Y. -S.
Lin, C. Liu, Y. Lu, S. Huang, and K. J. Chen,
"High-quality interface in Al2O3/GaN/AlGaN/GaN
MIS Structures with in situ pre-gate plasma nitridation,"
IEEE Elec. Dev. Lett., vol. 34, No. 12, pp.
1497-1499, 2013.
- Z. Tang, Q. Jiang, Y. Lu, S. Huang, S.
Yang, X. Tang, and K.
J. Chen, "600-V normally-off SiNx/AlGaN/GaN
MIS-HEMT with large gate swing and low current collapse,"
IEEE Elec. Dev. Lett., vol. 34, No. 11, pp.
1373-1375, 2013.
- Y. Wang, M. Wang, B. Xie, C. P. Wen, J.
Wang, Y. Hao, W. Wu, K. J. Chen, and
B. Shen, "High-Performance Normally-Off Al2O3/GaN
MOSFET Using a Wet Etching-Based Gate Recess Technique," IEEE
Elec. Dev. Lett., vol. 34, No. 11, pp. 1370-1372,
2013.
- Q. Zhou, W. Chen, C. Zhou, B. Zhang, and K. J. Chen, "High
sensitivity AlGaN/GaN lateral field-effect rectifier for
zero-bias microwave detection," Electronics Lett.,
vol. 49, No. 22, 2013.
- S. Huang, K. Wei, Z. Tang, S. Yang, C.
Liu, L. Guo, B. Shen, J. Zhang, X. Kong, G. Liu, Y. Zheng,
X. Liu, and K. J.
Chen, "Effects of interface oxidation on the
transport behavior of the two-dimensional-electron-gas in
AlGaN/GaN heterostructures by
plasma-enhanced-atomic-layer-deposited AlN passivation," J. Appl. Phys.,
114, 144509, 2013.
- S. Yang,
S. Huang, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and
K. J. Chen,
"Fabrication and characterization of enhancement-mode
high-K LaLuO3-AlGaN/GaN MIS-HEMTs," IEEE
Trans. on Electron Devices, vol. 60, No. 10, pp.
3040-3046, 2013.
- Y. Lu, S. Yang, Q. Jiang, Z. Tang, B. Li,
and K. J. Chen,
"Characterization of VT-instability in
enhancement-mode Al2O3-AlGaN/GaN
MIS-HEMTs," Phys.
Sta. Sol. (C), 10, No. 11, pp. 1397-1400, 2013.
- C. Liu, S. Liu, S. Huang, and K. J. Chen,
"Plasma-enhanced atomic layer deposition of AlN epitaxial
thin film for AlN/GaN heterostructure TFTs," IEEE
Elec. Dev. Lett., vol. 34, No. 9, pp. 1106-1108,
2013.
- A. M. H.
Kwan, Y. Guan, X. Liu, and K. J. Chen,
"Integrated over-temperature protection circuit for GaN
smart power ICs," Jpn.
J. Appl. Phys., 52,
08JN15, 2013.
- S. Yang,
S. Huang, Q. Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and
K. J. Chen, "Enhancement-mode LaLuO3-AlGaN/GaN
Metal-Insulator-Semiconductor
High-Electron-Mobility-Transistors using fluorine plasma
ion implantation," Jpn.
J. Appl. Phys., 52, 08JN02, 2013.
- (Invited)
K. J. Chen, and S. Huang, "AlN passivation by
plasma-enhanced atomic layer deposition for GaN-based
power switches and power amplifiers," Semiconductor Science
and Technology, vol. 28, No. 7, 074015, 2013.
- X. Liu, C. Zhan, K. W. Chan, MHS. Owen,
W. Liu, D. Z. Chi, L. S. Tan, K. J. Chen, and
Y. C. Yeo, "AlGaN/GaN metal-oxide-semiconductor
high-electron-mobility-transistors with a high breakdown
voltage of 1400 V and a complementary
metal-oxide-semiconductor compatible gold-free process," Jpn. J. Appl. Phys.,
52, 04CF06, 2013.
- Q. Zhou, W. Chen, S. Liu, B. Zhang, Z.
Feng, S. Cai, and K.
J. Chen, "Schottky-contact technology in InAlN/GaN
HEMTs for breakdown voltage improvement," IEEE Trans. on
Electron Devices, vol. 60, No. 3, pp. 1075-1081,
2013.
- Z. Tang, S. Huang, Q. Jiang, S. Liu, C.
Liu, and K. J. Chen, "High-voltage (600V)
low-leakage low-current-collapse AlGaN/GaN HEMTs with
AlN/SiNx passivation," IEEE Elec. Dev.
Lett., vol. 34, No. 3, pp. 366-368, 2013.
- Q. Jiang, C. Liu, Y. Lu, and K. J.
Chen, "1.4 kV AlGaN/GaN HEMTs on a GaN-on-SOI
platform," IEEE Elec. Dev. Lett., vol. 34, No. 3,
pp. 357-359, 2013.
- S. Huang, Q. Jiang, S. Yang, Z. Tang, and
K. J. Chen, "Mechanism of PEALD-grown AlN
passivation for AlGaN/GaN HEMTs: compensation of interface
traps by polarization charges," IEEE Elec. Dev. Lett.,
vol. 34, No. 2, pp. 193-195, 2013.
- A. W. H. Kwan and K. J. Chen, "A
gate overdrive protection technique for improved
reliability in AlGaN/GaN enhancement-mode HEMTs," IEEE
Elec. Dev. Lett., vol. 34, No. 1, pp. 30-32, 2013.
- W. Chen, J. Zhang, Z. Wang, J. Wei, B.
Zhang, and K. J. Chen, "Investigation of device
geometry- and temperature-dependent characteristics of
AlGaN/GaN lateral field-effect rectifier," Semicond.
Sci. Technol., vol. 28, 015021, 2013.
- Z. Dong, S. Tan, Y. Cai, H. Chen, S. Liu,
J. Xu, L. Xue, G. Yu, Y. Wang, D. Zhao, K. Hou, K. J.
Chen, and B. Zhang, "5.3A/400V normally-off
AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and
large gate swing," Electronics
Letters, vol. 49, No. 3, pp. 221-222, 2013.
2012:
- X. Wang, S. Liu, D. Ma, X. Zheng, G. Chen, F.
Xu, N. Tang, B. Shen, P. Zhang, X. Caom, B. Wang, S.
Huang, K. J. Chen, S. Zhou, and A. Yoshikawa,
"Fe-doped InN layers grown by molecular beam epitaxy," Appl.
Phys. Lett., 101, 171905,
2012.
- J. Fu, L. Yuan, and L. Yobas, and K.
J. Chen, "UV-illuminated Dielectrophoresis by
Two-Dimensional Electron Gas (2DEG) in AlGaN/GaN
Heterojunction," Phys. Stat. Sol. (a), 28042,
2012.
- Zhou, Q. Jiang, S. Huang, and K. J.
Chen, "Vertical leakage/breakdown mechanisms in
AlGaN/GaN-on-Si devices," IEEE Elec. Dev. Lett.,
2012, vol. 33, No. 8, pp. 1132-1134, 2012.
- S. Yang, S. Huang, H. Chen, C. Zhou, Q.
Zhou, M. Schnee, Q.-T. Zhao, J. Schubert, and
K. J. Chen, "AlGaN/GaN MISHEMTs with High-K LaLuO3
Gate Dielectric," IEEE Elec. Dev. Lett., 2012,
vol. 33, No. 7, pp. 979-981, 2012.
- X. Liu, C. Zhan, K. W. Chan, W. Liu, L. S.
Tan, K.
J. Chen and Y.-C. Yeo, "AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3
mΩ.cm2 using a CMOS-Compatible
Gold-Free Process,"
Appl. Phys. Express, 5, 066501, 2012.
- S. Huang, Q. Jiang, S. Yang, C. Zhou,
and K. J. Chen, "Effective Passivation of
AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film, " IEEE
Elec. Dev. Lett., vol. 33, No. 4, pp. 516-518, 2012.
- S. Liu, Y. Cai, G. Gu, J. Wang, C. Zeng,
W. Shi, Z. Feng, H. Qin, Z. Cheng, K. J. Chen, and
B. Zhang, "Enhancement-mode operation of nano-channel
Array (NCA) AlGaN/GaN HEMTs," IEEE Elec. Dev. Lett.,
vol. 33, No. 3, pp. 354-356, 2012.
- H. Chen, L. Yuan, Q. Zhou, C. Zhou, and
K. J. Chen, "Normally-off AlGaN/GaN power
tunnel-junction FETs," Phys. Stat. Sol. C, No.
3-4, pp. 871-874, 2012.
- S. Huang, S. Yang, J. Roberts,
and K. J. Chen, "Characterization of Vth-instability
in Al2O3/GaN/AlGaN/GaN MIS-HEMTs by
quasi-static C-V measurement," Phys. Stat. Sol.
C, No. 3-4, pp. 923-926, 2012.
- Q. Zhou, H.
Chen, C. Zhou, Z. H. Feng, S. J. Cai, and K. J.
Chen, "Schottky source/drain InAlN/AlN/GaN MISHEMT
with enhanced breakdown voltage," IEEE Elec. Dev.
Lett., vol. 33, No. 1, pp. 38-40, 2012.
- J. -Y. Lu, H. Ren, D. Deng, Y. Wang, K.
J. Chen, K. M. Lau, and T. Y. Zhang, "Thermally
activated pop-in and indentation size effects in GaN
films," J. Phys. D: Appl. Phys. 45 (2012) 085301.
- S. Jha, H. E. Wang, O. Kutsay, E.V. Jelenkovic,
K. J. Chen, I. Bello, V. Kremnican, J. A. Zapien, "Exploiting nanostructure-thin
film interfaces in advanced sensor device
configurations", Vacuum,
vol. 86, pp. 757-760, 2012.
2011:
- C. Ma, H.
Chen, C. Zhou, S. Huang, L. Yuan, J. Roberts, and K. J. Chen, "ON-state
critical gate overdrive voltage for fluorine-implanted
enhancement-mode AlGaN/GaN high electron mobility
transistors," J. Appl. Phys., 110, 114514,
2011.
- S. Huang, S. Yang, J.
Roberts, and K. J. Chen, "Threshold voltage
instability in Al2O3/GaN/AlGaN/GaN
metal-insulator-semiconductor high electron mobility
transistors," Jpn. J. Appl. Phys., 50, 110202,
2011.
- S. Yang, S. Huang, H. Chen, M.
Schnee, Q.-T. Zhao, J. Schubert, and K. J. Chen,
"Characterization of high-k LaLuO3 thin film
grown on AlGaN/GaN heterostructure by molecular beam
deposition," Appl. Phys. Lett., 99, 182103, 2011.
- L. Yuan, H.
Chen, Q. Zhou, C. Zhou, and K. J. Chen, "Gate-induced
Schottky barrier lowering effect in AlGaN/GaN metal-2DEG
tunnel junction field effect transistor," IEEE Elec.
Dev. Lett., vol. 32, No. 9, pp. 1221-1223, 2011.
- B. K. Li, M. J. Wang, K. J. Chen,
and J. N. Wang, "Enhanced electroluminescence from the
fluorine-plasma implanted Ni/Au-AlGaN/GaN Schottky diode,"
Appl. Phys. Lett., 99, 062101, 2011.
- H. Chen, M.
J. Wang, and K. J. Chen,
"Enhancement-mode AlGaN/GaN HEMTs fabricated by standard
fluorine ion implantation with a Si3N4
energy-absorbing layer," Electrochem. Solid-State Lett.
vol. 14, No. 6, pp. H229-231, 2011.
- A. M. H.
Kwan, K. -Y. Wong, Xiaosen Liu, and K. J. Chen, "High-gain and
high-bandwidth AlGaN/GaN high electron mobility transistor
comparator with high-temperature operation," Jpn, J. Appl.
Phys. Vol. 50, No. 4, 2011.
- M. J. Wang and K. J. Chen, "Kink effect in
AlGaN/GaN HEMTs induced by drain and gate pumping," IEEE
Electron Device Letters, vol. 32, No. 4, pp.
482-484, Apr. 2011.
- H.
Zhang, S. Bowman, and K. J. Chen, "Efficient
parameter extraction of microwave coupled-resonator
filter using genetic algorithms," Int. J. of RF
and Microwave Computer-Aided Engineering, vol.
21, No. 2, pp. 137-144, Mar. 2011.
- J. -Y. Lu, D. Deng, Y. Wang, K. J. Chen, K.
M. Lau, and T. Y. Zhang, "Phonon deformation potentials of
hexagonal GaN studied by biaxial stress modulation," AIP
Advances, 1 (2011) 032132.
- L. Yuan,
H. Chen, and K. J. Chen, "Normally-off AlGaN/GaN
metal-2DEG tunnel-junction field-effect transistors," IEEE
Electron Device Letters, vol. 32, No. 3, pp.
303-305, 2011.
- J. Fu and K. J. Chen,
"Microspheres manipulation system by patterned AlGaN/GaN
2DEG electrodes" Phys. Sta. Sol. (c), 8, No. 7-8,
pp. 2479-2482, 2011.
- S. Huang, H.
Chen, and K. J. Chen, "Surface
properties of AlGaN/GaN heterostructures treated by
fluorine plasma: an XPS study," Phys. Status Solidi C,
8, No. 7-8,
pp. 2200-2203, 2011.
- M. J. Wang and K. J. Chen, "Improvement of
the Off-State Breakdown Voltage with Fluorine Ion
Implantation in AlGaN/GaN HEMTs," IEEE Trans. Electron
Devices, vol. 58, No. 2, pp. 460-465. 2011.
- X. Liu and
K. J. Chen, "GaN Single-Polarity Power Supply
Bootstrapped Comparator for High Temperature Electronics,"
IEEE Electron Device Letters, vol. 32, No. 1, pp.
27-29, Jan. 2011.
- (Invited) K. J. Chen and C. Zhou,
"Enhancement-mode AlGaN/GaN HEMT and MIS-HEMT Technology,"
Phys. Sta. Sol. (a), 208, No. 2, pp. 434-438. Feb.
2011.
2010:
- Z. H. Feng, R. Zhou, S. Y. Xie, J. Y.
Yin, J. X. Fang, B. Liu, W. Zhou, K. J. Chen, S.
J. Cai, "18-GHz 3.65W/mm Enhancement-mode AlGaN/GaN HFET
using Fluorine Plasma Ion Implantation," IEEE Electron
Device Letters, vol. 31, no. 12, pp. 1386-1388, Dec.
2010.
- J. -Y. Lu, Z.-J. Wang, D. -M. Deng, Y.
Wang, K. J. Chen, K. M. Lau, and T.-Y. Zhang,
"Determining phonon deformation potentials of hexagonal
GaN with stress modulation," J. Appl. Phys., 108,
123420, 2010.
- W. Chen, C.
Zhou, and K. J. Chen,
"High-current-density high-voltage normally-off AlGaN/GaN
hybrid-gate HEMT with low on-resistance," Electronics
Letters, vo. 46, No. 24, pp. 1626-1627, 2010.
- T. Chang, T. -H. Hsu, E. Y. Chang, Y. -C.
Chen, H. -D. Trinh and K. J. Chen, "Normally-off
operation AlGaN/GaN MOS-HEMT with high threshold voltage,"
Electronics Letters, vol. 46, No. 18, pp.
1280-1281, 2010.
- S. Huang, H.
Chen, and K. J. Chen, "Effect of the
fluorine plasma treatment on the surface potential and
Schottky barrier height of AlGaN/GaN heterostructures," Appl.
Phys. Lett., 96, 233510, 2010.
- K. -Y. Wong,
W. Chen, and K. J. Chen, "Characterization
and analysis of the temperature-dependent on-resistance in
AlGaN/GaN lateral field-effect rectifiers," IEEE
Trans. Electron Devices, vol. 57, No. 8, pp.
1924-1929, 2010.
- M. J. Wang and K. J. Chen,
"Off-state Breakdown Characterization in AlGaN/GaN HEMT
Using Drain Injection Technique" IEEE Trans. Electron
Devices, vol. 57, No. 7, pp. 1492-1496, 2010.
- K. -Y. Wong,
W. Chen, X. Liu, C. Zhou, and K. J. Chen, "GaN Smart Power
IC Technology," Phys. Sta. Sol. (b), 247, No. 7,
pp. 1732-1734, 2010.
- M. J. Wang, C. C. Cheng, C. D.
Beling, S. Fung, and K. J. Chen, "Modulation of
polarization field by fluorine ions in AlGaN/GaN
heterostructures revealed by positron annihilation
spectroscopy," Phys. Sta. Sol. (a), 207, No. 6,
pp. 1332-1334, 2010.
- Zhou, W. J.
Chen, E. L. Piner, and K. J. Chen,
"Schottky-Ohmic Drain AlGaN/GaN Normally-Off HEMT with
Reverse Drain Blocking Capability," IEEE Electron
Device Letters, vol. 31, No. 7, pp. 668-670, 2010.
- S. K. Jha, C. P. Liu, Z. H. Chen, K.
J. Chen, I. Bello, J. A. Zapien, W. Zhang, and S.-T.
Lee, "Integrated Nanorods and Heterostructure Field Effect
Transistors for Gas Sensing," J.
Phys. Chem. C, 114, pp. 7999-8004, 2010.
- Q. Zhou, K.
-Y. Wong, W. J. Chen, and K. J. Chen,
"Wide-Dynamic-Range Zero-Bias Microwave Detector Using
AlGaN/GaN Heterojunction Field-Effect Diode," IEEE
Microwave and Wireless Components Letters, vol. 20,
No. 5, pp. 277-279, 2010.
- K. -Y. Wong,
W. J. Chen, and K. J. Chen, "Integrated
Voltage Reference Generator for GaN Smart Power Chip
Technology" IEEE Trans. Electron Devices, vol. 57,
No. 4, pp. 952-955, Apr. 2010.
- C. H. Zhou,
W. J. Chen, E. L. Piner, and K. J. Chen,
"AlGaN/GaN lateral field-effect rectifier with intrinsic
forward current limiting capability," Electronics
Letters, vol. 46, No. 6, pp. 445-447, Mar. 2010.
- C. H. Zhou,
W. J. Chen, E. L. Piner, and K. J. Chen,
"AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier
with Punch through Breakdown Immunity and Low
On-Resistance," IEEE Electron Device Letters, vol.
31. No. 1, pp. 5-7, 2010.
2009:
- B. K. Li, M. J. Wang, K.
J. Chen, and J. N. Wang, "Fermi-level depinning and
hole injection induced two-dimensional electron related
radiative emissions from a forward biased Ni/Au-AlGaN/GaN
Schottky diode," Appl. Phys. Lett. 95, 232111,
2009.
- K. -Y. Wong,
W. J. Chen, Q. Zhou, and
K. J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN
Lateral Field-Effect diodes for High-Temperature Wireless
Sensor and RFID Applications," IEEE Trans. Electron
Devices, vol. 56, No. 12, pp. 2888-2894, Dec. 2009.
- J. Lv, Z. Yang, G. Z. Yan, Y. Cai, B.
Zhang, and K. J. Chen, "Fabrication of Large-area
Suspended MEMS Structures Using GaN-on-Si Platform," IEEE
Electron Device Lett., vol. 30, No. 10, pp.
1045-1047, 2009.
- H. -Y. Huang, Z. -Y. Li, J. -Y. Lu, Z.
-J. Wang, C.
-S. Wang, K. M. Lau, K. J. Chen, and T.
-Y. Zhang, "Microbridge tests on gallium nitride thin
films," J. Micromech. Microeng.,
vol. 19, 095019, Sep. 2009.
- L. Yuan, M.
Wang, and K. J. Chen, "On the
stability of fluorine ions in AlGaN/GaN heterostructure: a
molecular dynamics study," Phys. Sta. Sol. (c),
vol. 6, No. S2, pp. S944-S947, June 2009.
- M. Wang, L.
Yuan, F. Xu, B. Shen, and K. J. Chen,
"Study of diffusion and thermal stability of fluorine ions
in GaN by Time-of-Flight Secondary Ion Mass Spectroscopy,"
Phys. Sta. Sol. (c), vol. 6, No. S2, pp. S952-S955,
June 2009.
- W. Chen, K.
Y. Wong, and K. J. Chen, "Single-Chip
Boost Converter using Monolithically Integrated AlGaN/GaN
Lateral Field-Effect Rectifier and Normally-off HEMT,"IEEE
Electron Device Lett., vol. 30, No. 5, pp. 430-432,
2009.
- M. J. Wang,
L. Yuan, F. Xu, B. Shen, and K. J. Chen,
"Diffusion mechanism and the thermal stability of fluorine
ions in GaN after ion implantation," J. Appl. Phys.,
105, 083519, 2009.
- H. Zhang and
K. J. Chen, "Design of dual-band rat-race
couplers," IET Microwave, Antenna and Propagation,
vol. 3, No. 3 pp. 514-521, 2009.
- M. J. Wang,
L. Yuan, C. Cheng, C. Beling, and K. J. Chen,
"Defect formation and annealing behaviors of
fluorine-implanted GaN layers revealed by positron
annihilation spectroscopy", Appl. Phys. Lett., 94,
061910, 2009.
- X. Huo, G. -W. Xiao, P. C. H. Chan, and K.
J. Chen, "Silicon-on-Organic Integration of a 2.4
GHz VCO using High-Q Copper Inductors and Solder-Bumped
Flip Chip Technology," IEEE Trans. Components and
Packaging Technology, vol. 32, No. 1, pp. 191-196,
2009.
- R. Wang, Y.
Cai, and K. J. Chen, "Temperature
Dependence and Thermal Stability of Planar-Integrated
Enhancement/Depletion-mode AlGaN/GaN HEMTs and Digital
Circuits", Solid State Electronics, 53, pp. 1-6, 2009.
2008:
- L. Yuan, M.
J. Wang, and K. J. Chen, "Molecular dynamics
calculation of the fluorine ions' potential energies in
AlGaN/GaN Heterostructures," J. Appl. Phys., 104,
116106, 2008.
- W. Chen, K.
Y. Wong, W. Huang, and K. J. Chen, "High-performance
AlGaN/GaN lateral field-effect rectifiers compatible with
high electron mobility transistors," Appl. Phys. Lett.,
vol. 92, 253501, 2008.
- (Invited
article) B. K. Li, K. J. Chen, K.
M. Lau, W. K. Ge, and J. N. Wang, "Characterization of
fluorine-plasma-induced deep centers in AlGaN/GaN
heterostructure by persistent photoconductivity," Phys.
Stat. Sol. (c), vol. 5, No. 6, pp. 1892-1894, 2008
- S. K. Jha, C. Surya, K. J. Chen,
K. M. Lau, and E. Jelencovic, "Low-frequency noise
properties of double channel AlGaN/GaN HEMTs," Solid-State
Electronics, 52, pp. 606-611, 2008.
- L. Yuan, M.
J. Wang, and K. J. Chen, "Fluorine Plasma
Ion Implantation in AlGaN/GaN Heterostructures: A
Molecular Dynamics Simulation Study," Appl. Phys.
Lett., 92, 102109, 2008.
- H. Zhang and K.
J. Chen, "A Second-Order Dual-Band Bandpass Filter
Using a Dual-Band Admittance Inverter," Microwave and
Optical Technology Lett., vol. 50, No. 5, pp. 1184-1187, May 2008..
- J. W. Zhang,
H. Zhang, S. G. Lu, Z. K. Xu, and K. J. Chen,
"The Effect of Physical Design Parameters on the RF and
Microwave Performance of the BST Thin Film Planar
Interdigitated Varactors" Sensors and Actuators A:
Physical, vol. 141, pp. 231-237, 2008.
- B. K. Li, W. Ge, J. N. Wang, and K. J.
Chen, "Persistent photoconductivity and carrier
transport in AlGaN/GaN heterostructures treated by
fluorine plasma," Appl. Phys. Lett. 92, 082105,
2008.
2007:
- X. Wang, B.
Z. Wang, H.
Zhang, and K. J. Chen, "A Tunable
Bandstop Resonator Based on a Compact Slotted Ground
Structure," IEEE Trans. Microwave Theory and
Techniques, vol. 55, No. 9, pp. 1912-1918, Sep.
2007.
- R. Wang, Y.
Cai, W. C. -W. Tang, K. M. Lau, and K. J.
Chen, "Integration of Enhancement and Depletion-mode
AlGaN/GaN MIS-HFETs by Fluoride-based Plasma Treatment," Phys.
Stat. Sol. (a), No. 6, 2023-2027, June 2007.
- K. -Y. Wong,
W. Tang, K. M. Lau, and K. J. Chen,
"Surface Acoustic Wave Device on AlGaN/GaN Heterostructure
Using Two-Dimensional Electron Gas Interdigital
Transducers," Appl. Phys. Lett., vol. 90, 213506,
May 2007.
- Z. Cheng, Y.
Cai, J. Liu, Y. G. Zhou, K. M. Lau, and K. J.
Chen, "1.9-GHz Low Noise Amplifier Using
High-Linearity and Low-Noise Composite-Channel HEMTs," Microwave
and Optical Technology Lett., vol. 49, No. 6, pp.
1360-1362, June 2007.
- Y, Cai, Z.
Cheng, Z. Yang, W. C. -W. Tang, K. M. Lau, and K. J.
Chen, "High Temperature Operation of AlGaN/GaN HEMTs
Direct-Coupled FET Logic (DCFL) Integrated Circuits," IEEE
Electron Device Lett., vol. 28, No. 5, pp. 328-331,
May, 2007.
- R. Wang,
Y.Cai, W. C. -W. Tang, K. M. Lau, and K. J.
Chen, "Device Isolation by Plasma Treatment for
Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN
High Electron Mobility Transistors," Jpn J.
Appl. Phys, vol. 46, No. 4B, pp. 2330-2333, 2007.
- D. Song, J.
Liu, Z. Cheng, W. C. -W. Tang, K. M. Lau, and K. J.
Chen, "Normally Off AlGaN/GaN Low-Density Drain HEMT
(LDD-HEMT) With Enhanced Breakdown Voltage and Reduced
Current Collapse," IEEE Electron Device Lett.,
vol. 28, No. 3, pp. 189-191, Mar. 2007.
- H. Zhang and
K. J. Chen, "A Stub Tapped Branch-Line Coupler for
Dual-Band Operations," IEEE Microwave and Wireless
Components Lett. , vol. 17, No. 2, pp. 106-108,
Feb. 2007.
- Z. Cheng, Y.
Cai, J. Liu, Y. G. Zhou, K. M. Lau, and K. J.
Chen, "A Low Phase-Noise X-Band MMIC VCO Using
High-Linearity and Low-Noise Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN
HEMTs", IEEE Trans. Microwave Theory and Techniques,
vol. 55, No. 1, pp. 23-29, Jan 2007.
- J. Liu, Y.
Zhou, J. Zhu, Y.
Cai, K. M. Lau, and K. J. Chen, "DC and
RF Characteristics of AlGaN/GaN/InGaN/GaN
Double-Heterojunction HEMTs," IEEE Trans. Electron
Devices, vol.. 54, No.
1, pp. 2-10, Jan. 2007.
2006:
- X. Huo, P. C. H. Chan, K. J. Chen,
and H. Luong, "A Physical Model for On-Chip Spiral
Inductors with Accurate Substrate Modeling," IEEE
Trans. Electron Devices, vol. 53, No. 12, pp.
2942-2949, Dec. 2006.
- R. Wang, Y.
Cai, C. -W. Tang, K. M. Lau, and K. J.
Chen, "Enhancement-Mode Si3N4/AlGaN/GaN
MISHFETs," IEEE Electron Device Letters, vol. 27,
No. 10, pp. 793-795, Oct. 2006.
- Y. Cai, Y. G.
Zhou, K. M. Lau, and K. J. Chen, "Control of
Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based
Plasma Treatment: From Depletion Mode to Enhancemend
Mode," IEEE Trans. Electron Devices, vol. 53, No.
9, pp. 2207-2215, Sep. 2006.
- Y. Cai, Z.
Cheng, W. C. K. Tang, K. M. Lau, and K. J.
Chen,
"Monolithically Integrated Enhancement/Depletion-Mode
AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4
Plasma Treatment," IEEE Trans. Electron Devices,
vol. 53, No. 9, pp. 2223-2230, Sep. 2006.
- R. Wang, Y.
Cai, W. Tang, K. M. Lau, and K. J. Chen,
"Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using
Fluoride-Based Plasma Treatment," IEEE Electron Device
Letters, vol. 27, No. 8, pp. 633-635, Aug. 2006.
- L. L. W.
Leung, J. -W. Zhang, W. C. Hon, and K. J. Chen, "Characterization
and Attenuation Mechanisms of CMOS Compatible
Micromachined Edge-suspended Coplanar Waveguides on
Low-resistivity Silicon Substrate," IEEE Trans.
Advanced Packaging, vol. 29, No. 3, pp. 496-503,
Aug. 2006.
- Z. Yang, R.
Wang, D. Wang, B. Zhang. K. M. Lau, and K. J. Chen,
"GaN on Patterned Silicon (GPS) Technique for GaN-based
MEMS," Sensors and Actuators A: Physical, vol.
130-131, pp. 371-378, Aug. 2006.
- Y. Cai, Y.
G. Zhou, K. M. Lau, and K. J. Chen
"Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance
and Low Knee-Voltage," IEICE Trans. on Electronics,
vol. E89-C, No. 7, 1025-1030, July, 2006.
- S. Jia, Y.
Cai, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen
"Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate," IEEE
Trans. on Electron Devices, vol. 53, No. 6, pp.
1474-1477, June, 2006.
- J. Liu, Y. G.
Zhou, J. Zhu, K. M. Lau, and K. J. Chen,
"AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch," Phys.
Stat. Sol. (c), vol. 3, No. 6, pp. 2312-2316, 2006.
- Z. Yang, R.
N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J.
Chen "Fabrication of suspended GaN microstructures
using GaN-on-patterned-silicon (GPS) technique," Phys.
Stat. Sol. (a), vol. 203, No. 7, pp. 1721-1724, May
2006.
- L. L. W.
Leung and K. J. Chen, "CAD Equivalent
Circuit Modeling of Attenuation and Cross-Coupling for
Edge-Suspended Coplanar Waveguides on Lossy Silicon
Substrate," IEEE Trans. Microwave Theory and
Techniques, vol. 54, No. 5, pp. 2249-2255, May 2006.
- H. Zhang and K. J. Chen, "Bandpass Filters
with Reconfigurable Transmission Zeros Using
Varactor-Tuned Tapped Stubs," IEEE Microwave and
Wireless Components Lett.,vol. 16, No. 5, pp.
249-251, May 2006.
- S. Jia, Y.
Cai, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen
"Enhancement-Mode AlGaN/GaN High Electron Mobility
Transistors on Silicon Substrate," Phys. Sta. Sol. (c)
, vol. 3, pp. 2368-2372, 2006.
- Z. Feng, S. J. Cai, K. J. Chen,
and K. M. Lau, "Isoelectronic Indium Surfactant-doped
AlGaN/GaN High Electron Mobility Transistors," Appl.
Phys. Lett., vol. 88, 122113, 2006.
- H. Zhang and K. J. Chen, "Miniaturized
Coplanar Waveguide Bandpass Filters Using Multi-Section
Stepped Impedance Resonators," IEEE Trans. Microwave
Theory and Techniques, vol. 54, No. 3, pp.
1090-1095, 2006.
- Z. Yang, R.
Wang, D. Wang, B. Zhang. K. M. Lau, and K. J. Chen,
"Mechanical Characterization of Suspended GaN
Microstructures by GaN-on-Patterned-Silicon Technique," Appl.
Phys. Lett., vol. 88, 041913, 2006.
- J. Liu, Y. G.
Zhou, J. Zhu, K. M. Lau, and K. J. Chen,
"AlGaN/GaN/InGaN/GaN Double Heterojunction HEMTs with an
InGaN-Notch for Enhanced Carrier Confinement," IEEE
Electron Device Letters, vol. 27, No.1, pp. 10-12,
2006.
2005:
- Z. Feng, S. J. Cai, K. J. Chen,
and K. M. Lau, "Enhanced-Performance of AlGaN-GaN HEMTs
Grown on Grooved Sapphire Substrates," IEEE Electron
Device Letters, vol. 26, No. 12, pp. 870-872, Dec.
2005.
- L. L. W.
Leung and K. J. Chen, "Microwave
Characterization and Modeling of High Aspect Ratio
Through-Wafer Interconnect Vias in Silicon substrates,"
IEEE Trans. on Microwave Theory and Techniques,,
vol. 53, No. 8, pp. 2472-2480, Aug. 2005.
- Z. Cheng, J.
Liu, Y. G. Zhou, Y. Cai, K. J. Chen, and
K. M. Lau, "Broadband Microwave Noise Characteristics of
High-Linearity Composite-Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN
HEMTs," IEEE Electron Device Letters, vol. 26,No.
8, pp. 521-523, Aug. 2005.
- Y. Cai, Y. G.
Zhou, K. J. Chen, and K. M. Lau, "High-Performance
Enhancement-Mode AlGaN/GaN HEMTs using Fluoride-based
Plasma Treatment," IEEE Electron Device Letters,
vol. 26, No. 7, pp. 435-437, 2005.
- S. Chu, Y. G.
Zhou, K. J. Chen, and K. M. Lau, "Q-Factor
Characterization of Radio-Frequency GaN-based
Metal-Semiconductor-Metal Planar Inter-Digitated
Varactors," IEEE Electron Device Letters, vol. 26,
No. 7, pp. 432-434, 2005.
- H. Zhang and
K. J. Chen, "A Tri-Section Stepped-Impedance
Resonator for Cross-Coupled Bandpass Filters," IEEE
Microwave and Wireless Components Letters, vol. 15,
No. 6, pp. 401-403, June, 2005.
- R. M. Chu, Y. G. Zhou, J. Liu, D. Wang, K.
J. Chen, and K. M. Lau, "AlGaN-GaN Double-Channel
HEMTs," IEEE Trans. Electron Devices, vol. 52, No.
4, pp. 438-446, Apr. 2005.
- Y. G. Zhou, R. M. Chu, J. Liu,
K. J. Chen, and K. M. Lau, "Gate
leakage in AlGaN/GaN HEMTs and its suppression by
optimization of MOCVD growth," Phys. Sta. Sol. (c),
vol. 2, No. 7, pp. 2663-2667, 2005.
- J. Liu, Y. G.
Zhou, R. M. Chu,
Y. Cai, K. J. Chen, and K. M. Lau,
"Highly Linear Al0.3Ga0.7N/Al0.05Ga0.95N/GaN
Composite-Channel HEMTs," IEEE Electron Device Letters,
vol. 26, No. 3, pp. 145-147, Mar. 2005.
- S. Jia, Y.
Dikme, D. Wang,
K. J. Chen, K. M. Lau, and M. Heuken,
"AlGaN-GaN HEMTs on Patterned Silicon (111) Substrate," IEEE
Electron Device Letters, vol. 26, No. 3, pp.
130-132, Mar. 2005.
- D. Wang, S.
Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. van
Gemmern, Y. C. Lin, M. Heuken, and R. H. Jansen,
"Micro-Raman Scattering Study of the Stress Distribution
in GaN films grown on patterned Si(111) substrate using
metalorganic vapor deposition," Journal of Applied
Physics, vol. 97, 056103, Mar. 2005.
- J. W. Zhang,
W. C. Hon, L. L. W. Leung, and K. J. Chen, "CMOS-Compatible
Micromachining Techniques for Fabricating High-Performance
Edge-suspended RF/Microwave Passive Components on Silicon
Substrates," Journal Of Micromechanics and
Microengineering, vol. 15, No. 2, pp. 328-335, Feb.
2005.
- Y. Cai, Y. G. Zhou, and K. J. Chen, and
K. M. Lau, "III-Nitride Metal-Insulator-Semiconductor
Heterojunction Field-Effect Transistors Using Sputtered
AlON Thin Films,"Appl. Phys. Lett., vol. 86, No. 3,
032109, Jan. 2005.
- Y. G. Zhou, D. Wang, R. M. Chu, C. -W.
Tang, Y. Qi, Z. Lu, K. J. Chen, and K. M. Lau,
"Correclation of In-situ Reflectance Spectrum and
Resistivity of GaN/Al2O3 Interfacial
Layer in Metalorganic Chemical Vapor Deposition," IEEE/TMS
Journal of Electronic Materials, vol. 34, pp.
112-118, Jan. 2005.
2004:
- Wang, Y.
Dikme, S. Jia,
K. J. Chen, K. M. Lau, P. van Gemmern, Y. C. Lin,
H. Kalisch, R. H. Jansen, and M. Heuken, "Characterization
of GaN grown on patterned Si(111) substrate," Journal
of Crystal Growth, vol. 272, pp. 489-495, Dec. 2004.
- T. Suligoj, H. Liu, J. K. O. Sin, K. Tsui, R. M. Chu, K.
J. Chen, P. Biljanovic, and K. L. Wang, "A Low-Cost
Horizontal Current Bipolar Transistor (HCBT) Technology
for the BiCMOS Integration with FinFETs," Solid-State
Electronics, vol. 48, pp. 2047-2050, Nov. 2004.
- K. J. Chen, K. W. Chan, M.
K. W. Wong, N. M. K. Fok, N. C. H. Fan, "High-Performance
Large-Inductance Embedded Inductors in Thin Array Plastic
Packaging (TAPP) for RF System-in-Package Applications," IEEE
Microwave and Wireless Components Letters,, vol. 14,
No. 9, pp. 449-451, Sep. 2004.
- L. L. W.
Leung, W. C. Hon, and K. J. Chen, "Low-loss
Coplanar Waveguides Interconnects on Low-resistivity
Silicon Substrate," IEEE Trans. on Components and
Packaging Technologies,, vol. 27, No. 3, pp.
507-512, Sep. 2004.
- K. J. Chen, W. C. Hon, J. -W.
Zhang, and L. L. W. Leung, "CMOS-Compatible
Micromachined Edge-suspended Inductors with High Q-factors
and Self-resonance Frequencies," IEEE Electron Device
Letters,, vol. 25, No. 6, pp. 363-365, June, 2004.
- L. L. W.
Leung, K. J. Chen, X. Huo, and P. C. H.
Chan, "Low-loss Microwave Filter on CMOS-grade Standard
Silicon Substrate with a Low-k BCB Dielectric," Microwave
and Optical Technology Letters, vol. 40, No. 1, pp.
9-11, Jan. 2004.
2003:
- R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M.
Lau, "Admittance Characterization and Analysis of Trap
States in AlGaN/GaN Heterostructures," Phys. Sta.
Sol.(c) , No. 7, pp. 2400-2403, Oct. 2003.
- K. Tsui, K. J. Chen, S. Lam, and M. Chan,
"0.5-um Silicon-on-Sapphire Metal Oxide Semiconductor
Field Effect Transistor for RF Power Amplifier
Application," Jpn. J. Appl. Phys., vol. 42, Part
1, No. 8, pp. 4982-4986, Aug. 2003.
- K. J. Chen, G. F. Niu, "Logic Synthesis
and Circuit Modeling of a Programmable Logic Gate based on
Controlled Quenching of Series-Connected Negative
Differential Resistance Devices," IEEE J. Solid-State
Circuits, vol. 38, No. 2, pp. 312-318, Feb. 2003.
Recent
Conference Papers (2003-present)
2017:
- M. Hua, J. Wei, Q. Bao, J. He, Z. Zhang, Z.
Zheng, J. Lei, and K.
J. Chen, "Reverse-Bias Stability and Reliability of
Hole-Barrier-Free E-mode LPCVD-SiNx/GaN MIS-FETs," 2017
Int. Electron Device Meeting (IEDM 2017),
San Francisco, CA, USA, Dec. 4-6, 2017.
- J. Lei, J. Wei, G. Tang, Q. Qian, M. Hua,
Z. Zhang, Z. Zheng, and K. J. Chen, "An
Interdigitated GaN MIS-HEMT/SBD Normally-Off Power Switching
Device with Low ON-resistance and Low Reverse Conduction
Loss," 2017 Int. Electron
Device Meeting (IEDM 2017), San Francisco, CA, USA, Dec. 4-6,
2017.
- R. Xie, G. Xu, X. Yang, H. Wang, M. Tian, Y.
Tian, F. Zhang, W. Chen, L. Wang, and K. J. Chen,
"Switching Transient Analysis for Normally-off GaN
Transistors with p-GaN Gate in a Phase-leg Circuit"
in Proc. Energy Conversion Congress and Exposition
(ECCE), Cincinnati, OH, USA, 2017.
- Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei,
and K. J. Chen,
“Low-Resistance Contact to Single-Layer MoS2 by
Depositing Ultrathin High-k Dielectric with Remote N2
Plasma Treatment as Tunneling Layer,”2017 International
Conference on Solid State Device and Materials (SSDM 2017)
Sendai, Japan, Sep. 19-21, 2017.
- G. Tang, J.
Wei, Z. Zhang, M. Hua, X. Tang, H. Wang, and K. J. Chen,
“Characterization and Analysis of Dynamic Ron of GaN-on-Si
lateral Power Devices with Grounded and Floating Si
Substrate,” 12th Int. Conf. on Nitride
Semiconductors (ICNS-12), Strasbourg, France, July. 24- 28, 2017.
- J. He, M. Hua,
G. Tang, Z. Zhang, and K. J. Chen,
“Comparison of E-mode Fully recessed GaN MIS-FETs and
Partially-recessed MIS-HEMTs with PECVD-SiNx/LPCVD-SiNx Gate
Stack,” 12th Int. Conf. on Nitride
Semiconductors (ICNS-12),
Strasbourg, France, July. 24- 28, 2017.
- M. Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang,
and K. J. Chen,
“PBTI and NBTI of Fully-recessed E-mode LPCVD-SiNx/GaN
MIS-FETs with PECVD-SiNx Interfacial Protection Layer,”12th
Int. Conf. on Nitride Semiconductors (ICNS-12),
Strasbourg, France, July. 24- 28, 2017.
- Q. Bao, Y. Li,
Z. Zhang, Q. Qian, J. Lei, G. Tang, B. Huang and K. J. Chen,
“Effective Cross-Plane Thermal Conductivity of GaN-on-Si
(111) Epi-layers Evaluated by 3-Omega Technique,” 12th
Int. Conf. on Nitride Semiconductors (ICNS-12),
Strasbourg, France, July. 24- 28, 2017.
- G. Tang, H.
Wang, J. Lei, and K.
J. Chen, “Monolithic Intergration of E/D-Mode HEMTs
for Logic Circuit on the p-GaN Gate Technology Platform,” 12th
Int. Conf. on Nitride Semiconductors (ICNS-12),
Strasbourg, France, July. 24- 28, 2017.
- M.
Hua, Q. Qian, J. Wei, Z. Zhang, G. Tang, and K. J. Chen, "TDDB
and PBTI Characterizations of Fully-recessed E-mode GaN
MIS-FETs with LPCVD-SiNx/PECVD-SiNx
Gate Dielectric Stack," 2017 International Conference on
Compound Semiconductor Manufacturing Technology (CS
MANTECH 2017) Indian Wells. CA, USA, May 22-26, 2017.
- M.
Hua, Z. Zhang, Q. Qian, J. Wei, Q. Bao, G. Tang, and K. J. Chen,
"High-Performance Fully-recessed Enhancement Mode GaN
MIS-FETs with Crystalline Oxide Interlayer," 2017 Int.
Symp. On Power Semiconductor Devices and ICs (ISPSD'17),
Sapporo, Japan, May 28- June 1, 2017. (Charitat Award: for the best Young
Researcher)
- G.
Tang, J. Wei, Z. Zhang, X. Tang, M. Hua, H. Wang, and K. J. Chen,
"Impact of substrate termination on dynamic performance of
GaN-on-Si lateral power devices," 2017 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'17),
Sapporo, Japan, May 28- June 1, 2017.
- J.
Wei, Y. Wang, M. Zhang, H. Jiang, and K. J. Chen,
"High-speed power MOSFET with low reverse transfer
capacitance using a trench/planar gate architecture,"
2017 Int. Symp. On Power Semiconductor Devices and ICs
(ISPSD'17), Sapporo, Japan, May 28- June 1, 2017.
- J. Wei, M. Zhang, H. Jiang, H. Wang, and
K. J. Chen,
"Charge storage effect in SiC trench MOSFET with a floating
p-shield and its impact on dynamic performances," 2017
Int. Symp. On Power Semiconductor Devices and ICs
(ISPSD'17), Sapporo, Japan, May 28- June 1, 2017.
- S. Yang, C. Zhou, S. Han, K. Sheng, and
K. J. Chen, "Buffer Trapping-Induced RON Degradation in GaN-
on-Si Power Transistors: Role of Electron Injection from Si
Substrate,".2017 Int. Symp. On Power Semiconductor
Devices and ICs (ISPSD'17), Sapporo, Japan, May 28-
June 1, 2017.
2016:
- Z. Zhang, B. Li, X. Tang, Q. Qian, M.
Hua, B. Huang, and K. J. Chen, " First-Principles
Study of GaN Surface Electronic Structures with Ga, O or
N Adatom," 47th IEEE Semiconductor Interface
Specialists Conference (SISC), San Diego, CA, USA,
Dec. 8-10, 2016.
- Z. Zhang, B. Li, X. Tang, Q. Qian, M.
Hua, B. Huang, and K. J. Chen, "Nitridation
of GaN Surface for Power Device Application: A
First-Principles Study," 2016 Int. Electron
Device Meeting (IEDM 2016), San Francisco, CA,
USA, Dec. 5-7, 2016.
- M. Hua, Z. Zhang, J. Wei, J. Lei, G.
Tang, K. Fu, Y. Cai, B. Zhang, and K. J. Chen,
"Integration of LPCVD-SiNx Gate Dielectric
with Recessed-gate E-mode GaN MIS-FETs: Toward High
Performance, High Stability and Long TDDB Lifetime," 2016 Int. Electron Device
Meeting (IEDM 2016),
San Francisco, CA, USA, Dec. 5-7, 2016.
- S.
Yang, Z. Tang, Y. Lu, Q. Jiang, and A. Zhang, "Role of
shallow surface traps and polarization charges in
nitride-based passivation for AlGaN/GaN heterojunction
FET," IFWS 2016,
Beijing, China, Nov. 15-17, 2016.
- B.
Li, X. Tang, J. Wang, and K. J. Chen,
"Enhancing Dynamic Performance of Gan-on-Si Power
Devices With on-chip Photon Pumping," 2016 13th IEEE
International Conference on Solid-State and Integrated
Circuit Technology (ICSICT 2016) Hangzhou, China,
Oct. 25-28, 2016.
- H. Wang, R. Xie, C. Liu, J. Wei, G.
Tang, and K. J.
Chen, " Maximizing
the Performance of 650 V p-GaN Gate HEMTs: Dynamic RON
Characterization and Gate-Drive Design Considerations, "
2016 IEEE Energy
Conversion Cong. and Expo. (ECCE), Milwaukee, WI,
USA, Sept. 18-22, 2016.
- R. Xie, H. Wang, G. Tang, X. Yang, and K. J. Chen, "
An Analytical Model for False Turn-On Evaluation of GaN
Transistor in Bridge-Leg Configuration, " 2016 IEEE Energy
Conversion Cong. and Expo. (ECCE), Milwaukee, WI,
USA, Sept. 18-22, 2016.
- S. Yang, S. Liu, C. Liu, M. Hua, G.
Longobardi, F. Udrea, and K. J. Chen, "
Performance Enhancement and Characterization Techniques
for GaN Power Devices, " 2016 Compound
Semiconductor Week (CSW 2016), Toyama, Japan, June
26-30, 2016.
- J.
Wei, S. Liu, B. Li, X. Tang, Z. Zhang, G. Tang, and K. J. Chen, " Critical
Heterostructure Design for Low On-Resistance
Normally-Off Double-Channel MOS-HEMT, " 2016 Compound Semiconductor Week
(CSW 2016),
Toyama, Japan, June 26-30, 2016.
- S.
Yang, Y. Lu, S. Liu, H. Wang, C. Liu, and
K. J. Chen, "Impact
of VTH
Shift on RON
in E/D-Mode GaN-on-Si Power Transistors: Role of Dynamic
Stress and Gate Overdrive,
"
2016 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'16),
Prague, Czech
Republic, Jun. 12-16, 2016.
- X.
Tang, B. Li, H. Wang, J. Wei, G. Tang, Z. Zhang, and
K. J. Chen, "Impact
of Integrated Photonic-Ohmic Drain on Static and Dynamic
Characteristics of GaN-on-Si Heterojunction Power
Transistors,
"
2016 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'16),
Prague, Czech
Republic, Jun. 12-16, 2016.
- J. Wei,
H. Jiang, Q. Jiang, and K. J. Chen, "Proposal
of a Novel GaN/SiC Hybrid FET (HyFET) with Enhanced
Performance for High-Voltage Switching Applications,
"
2016 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'16),
Prague, Czech
Republic, Jun. 12-16, 2016.
- S. Yang, L. Lei, K. Yu, A.
Zhang, and K.
J. Chen, " Comparison of SiNx and AlN
Passivations for AlGaN/GaN HEMTs, " 229th ECS Meeting, San Diego, USA,
May 29-Jun. 2, 2016.
·
M.
Hua, Y. Lu, S. Liu, C. Liu, K. Fu, Y. Cai, B. Zhang, and K. J. Chen, "Compatibility of
AlN/SiNx Passivation with High-Temperature
Process," CS
MANTECH Conference, Hyatt
Regency Miami, Florida, USA, May 16-19, 2016.
2015:
- X.
Tang, B. Li, Y. Lu, H. Wang, C. Liu, J. Wei, and K. J. Chen,
"III-Nitride Transistors with Photonic-Ohmic Drain for
Enhanced Dynamic Performances, " 2015 Int.
Electron Device Meeting (IEDM 2015),
Washington, DC, USA, Dec. 7-9, 2015.
- J.
Wei, S. Liu, B. Li, X. Tang, Y. Lu, C. Liu, M. Hua, Z.
Zhang, G. Tang, and K. J. Chen, "Enhancement-mode
GaN Double-Channel MOS-HEMT with Low On-resistance and
Robust Gate Recess, " 2015 Int. Electron
Device Meeting (IEDM 2015), Washington, DC,
USA, Dec. 7-9, 2015.
- (Invited)
K. J. Chen,
B. Li, X. Tang, and J. Wang, "Optoelectronic
Devices on AlGaN/GaN HEMT Platform, " 11th Int. Conf. on Nitride
Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- M.
Hua, C. Liu, S. Yang, S. Liu, K. Fu, Z. Dong, Y. Cai, B.
Zhang, and K.
J. Chen, "Gate
Leakage and Time-Dependent Dielectric Breakdown
Characteristics of LPCVD-SiNx/AlGaN/GaN
MIS-HEMTs, " 11th
Int. Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- X.
Tang, Q. Jiang, H. Wang, B. Li, and K. J. Chen, "Suppressed
Substrate-Coupled Cross-Talk under AC High-Voltage
Switching on the AlGaN/GaN-on-Si Smart Power IC
Platform, "
11th Int. Conf. on Nitride
Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- S.
Yang, Z. Tang, Y. Lu, A. Zhang, and K. J. Chen, "Differences
between SiNx and AlN Passivations for
AlGaN/GaN HEMTs: A Tcad-Simulation Based Study, " 11th Int. Conf. on Nitride
Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- S.
Liu, S. Yang, C. Liu, Y. Lu and K. J. Chen, "High-Performance
Gate-Recessed Normally-Off GaN MIS-HEMTs with Thin
Barrier Layer," 11th Int. Conf. on Nitride
Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- H.
Wang, C. Liu, Q. Jiang, Z. Tang, and K. J. Chen, "Hard
Switching Characteristics of AlN-Passivated AlGaN/GaN on
silicon MIS-HEMTs," 11th Int. Conf. on Nitride
Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- C.
Liu, J. Wei, S. Liu, H. Wang, Z. Tang, S. Yang and K. J. Chen, "Improved
High-Voltage Performance of Normally-Off GaN MIS-HEMTs
Using Fluorine implanted Enhanced Back Barrier, "
11th Int. Conf. on
Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- X.
Tang, B. Li, Y. Lu, and K. J. Chen, "On-Chip Addressable
Schottky-on-Heterojunction Light-Emitting Diode Arrays
on AlGaN/GaN-On-Si Platform, "
11th Int.
Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30-
Sept. 4, 2015.
- S. Lin,
M. Wang, B. Xie, C. P. Wen, Min Yu, J. Wang, Y. Hao, W.
Wu, B. Shen, and K. J. Chen, "
Reduction of the Current Collapse in GaN High Electron
Mobility Transistors by a Novel Surface Treatment," 11th Int.
Conf. on Nitride Semiconductors (ICNS-11), Beijing, China, Aug. 30-
Sept. 4, 2015.
- L.
Yuan, X. Xiao, L. Tang, H. Li, Y. Jiang, K. J. Chen and
A. Yen, "
First Demonstration of 0.27-Ω 600-V/10-A GaN-on-Si Power
MIS-HEMTs in a 200-mm Hybrid CMOS-/Au-Compatible Process
Line,"
11th Int. Conf. on Nitride
Semiconductors (ICNS-11), Beijing, China, Aug. 30- Sept. 4,
2015.
- (Invited) S. Yang, S. Liu, C. Liu, Y. Lu, and K. J. Chen, " Nitridation
interfacial-layer technology for enhanced stability in
GaN-based power devices, " 2015 IEEE
International Symposium on Radio-Frequency Integration
Technology(RFIT 2015), Sendai, Japan, Aug. 26-28,
2015.
- (Keynote speach)
K. J. Chen, "Technology Challenges of GaN
Heterojunction Power Devices," The 7th Asia-Pacific Workshop on
Widegap Semiconductors (APWS 2015), Seoul, Korea,
May 17-20, 2015.
- X.
Tang, B. Li, and K.
J. Chen, "Accelerated
Electron De-trapping in AlGaN/GaN-on-Si Power HEMTs using
Schottky-on-Heterojunction Light Emitting Devices, " 2015 Compound
Semiconductor Week (CSW 2015), University of
California Santa Barbara, CA, USA, June 28-July 2, 2015.
- C. Liu, H.
Wang, S. Yang, Y. Lu, S. Liu, Z. Tang, Q. Jiang, and K. J. Chen, "Improved Thermal Stabilities
in Normally-off GaN MIS-HEMTs, "
CS MANTECH Conference,
Scottsdale, Arizona, USA, May 18-21, 2015.
- C. Liu, H.
Wang, S. Yang, Y. Lu, S. Liu, Z. Tang, Q. Jiang, S. Huang,
and K. J. Chen,
"Normally-off GaN MIS-HEMT
with Improved Thermal Stability in DC and Dynamic
Performance, " 2015 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'15), Hong
Kong, China, May 10-14, 2015.
- M. Hua, C.
Liu, S. Yang, S. Liu, Y. Lu, K. Fu, Z. Dong, Y. Cai, B.
Zhang, and K. J.
Chen, "650-V
GaN-Based MIS-HEMTs Using LPCVD-SiNx as
Passivation and Gate Dielectric, " 2015 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'15),
Hong Kong, China, May 10-14, 2015.
- X. Tang, B.
Li, and K. J. Chen,
"On-chip Optical Pumping of
Deep Traps in AlGaN/GaN-on-Si Power HEMTs," 2015 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'15), Hong
Kong, China, May 10-14, 2015.
2014:
- S. Yang, S. Liu,
C.
Liu, Z.
Tang, Y.
Lu, and K. J. Chen,
"Thermally
Induced Threshold Voltage Instability of III-Nitride
MIS-HEMTs and MOSC-HEMTs : Underlying Mechanisms and
Optimization Schemes," 2014 Int. Electron Device
Meeting (IEDM 2014),
San
Francisco, CA, USA, Dec. 15-17, 2014.
- B.
Li, X. Tang, Q. Jiang, Y. Lu, H. Wang, J. Wang, and K. J. Chen,
"Schottky-on-Heterojunction
Optoelectronic Functional Devices Realized on AlGaN /
GaN-on-Si Platform," 2014 Int. Electron
Device Meeting (IEDM 2014), San
Francisco, CA, USA, Dec. 15-17, 2014.
- S.
Huang, Q. Jiang, K. Wei, G. Liu, J. Zhang, X. Wang, Y.
Zheng, B. Sun, C. Zhao, H. Liu, Z. Jin, X. Liu, H. Wang,
S. Liu, Y. Lu, C. Liu, S. Yang, Z. Tang, J. Zhang, Y. Hao,
and K. J. Chen,
"High-Temperature
Low-Damage Gate Recess Technique and Ozone-Assisted
ALD-grown Al2O3 Gate Dielectric for
High-Performance Normally-Off GaN MIS-HEMTs, "2014 Int. Electron
Device Meeting (IEDM 2014), San Francisco, CA, USA,
Dec. 15-17, 2014.
- (Invited) K. J. Chen, S.
Yang, Z. Tang, and S. Huang, "Dielectric/III-N
interfaces with nitridation interfacial-layer for GaN power
electronics," 45th IEEE
Semiconductor Interface Specialists Conference (SISC),
San Diego, USA, Dec. 10-13, 2014.
- S. Yang,
and K. J. Chen,
"Nitridation
Interfacial-Layer Technology: Enabling Low Interface Trap
Density and High Stability in III-Nitride MIS-HEMTs," 12th International
Conferences on Solid-State and Integrated Circuit
Technology (ICSICT2014), Guilin, China, Oct. 28-31,
2014.
- (Invited) K. J. Chen, S.
Yang, Z. Tang, S. Huang, Y. Lu, Q. Jiang, S. Liu, C. Liu,
and B. Li, "Surface
Nitridation for Improved Dielectric/III−Nitride Interfaces
in GaN MIS−HEMTs," 8th International Workshop on
Nitride Semiconductors (IWN 2014), Wrocław,
Poland, August 24-29, 2014.
- S. Liu, S.
Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, "Interface
Characterization of Normally−Off Al2O3/AlN/GaN
MOS−Channel− HEMTs with an AlN Interfacial Layer," 8th International Workshop on Nitride
Semiconductors (IWN 2014), Wrocław, Poland,
August 24-29, 2014.
- Y. Lu, B.
Li, X. Tang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, "Investigation
of Gate Degradation in Al2O3−AlGaN/GaN
MIS−HEMTs using Transparent Gate Electrode," 8th International Workshop on
Nitride Semiconductors (IWN 2014), Wrocław,
Poland, August 24-29, 2014.
- H. Wang, A. M. H. Kwan, Q. Jiang, and K. J. Chen, "A GaN Pulse
Width Modulation Integrated Circuit," 2014
Int. Symp. On Power Semiconductor Devices and ICs (ISPSD'14),
Waikoloa, Hawaii, USA, June 15-19, 2014.
- S. Liu, S.
Yang, Z. Tang, Q. Jiang, C. Liu, M. Wang, and K. J. Chen, "Performance
Enhancement of Normally-Off Al2O3/AlN/GaN
MOS-Channel-HEMTs with an ALD- Grown AlN Interfacial Layer," 2014
Int. Symp. On Power Semiconductor Devices and ICs
(ISPSD'14), Waikoloa, Hawaii, USA, June 15-19, 2014.
- M. Wang, Y.
Wang, C. Zhang, C. P. Wen, J. Wang, Y. Hao, W. Wu, B. Shen,
and K. J. Chen,
"Normally-Off Hybrid Al2O3/GaN
MOSFET on Silicon Substrate Based on Wet-Etching," 2014 International
Symposium on Power Semiconductor Devices and ICs (ISPSD'14), Waikoloa, Hawaii, USA, June
15-June19, 2014.
- Z. Tang, S.
Huang, and K. J.
Chen, "Stability
and Temperature Dependence of Dynamic RON in
AlN-Passivated AlGaN/GaN HEMT on Si Substrate," CS
MANTECH Conference, Denver, Colorado, USA, May 19-22,
2014. (Best student paper award)
- A. Zhang,
L. Zhang, Z. Tang, X. Cheng, Y. Wang, K. J. Chen, and
M. Chan, "Analytical
Modeling for AlGaN/GaN HEMTs,"
The 11th International
Workshop on Compact Modeling (IWCM 2014),
Singapore, Jan. 23, 2014.
2013:
- S. Yang, Z. Tang, K. Wong, Y. Lin, S. Huang, and K. J. Chen,
"Mapping of interface traps in high-performance Al2O3/AlGaN/GaN
MIS-heterostructures using frequency- and
temperature-dependent C-V techniques," 2013 Int. Electron
Device Meeting (IEDM 2013), Washington, DC, USA, Dec.
9-11, 2013.
- Z. Tang, Q.
Jiang, S. Huang, Y. Lu, S. Yang, C. Liu, X. Tang, S. Liu, B.
Li, and K. J. Chen, "Monolithically
Integrated 600-V E/D-Mode SiNx/AlGaN/GaN MIS-HEMTs and
Their Applications in Low-Standby-Power Start-Up Circuit
for Switched-Mode Power Supplies," 2013 Int. Electron Device Meeting (IEDM 2013),
Washington, DC, USA, Dec. 9-11, 2013.
- (Invited
talk) K. J. Chen, "Toward GaN-based Power
Integrated Circuits," The
2nd Int. Conf. on Advanced Electromaterials
(ICAE 2013), Nov. 12-15, 2013, ICC Jeju, Korea.
- C. Liu, S. Liu, S. Huang, B. Li, and K. J. Chen, "AlN/GaN
heterostructure TFTs with the polarized AlN barrier grown by
300 oC plasma enhanced atomic layer epitaxy," 10th
Topical Workshop on Heterostructure Microelectronics
(TWHM-10), Sep. 2-5, 2013, Hakodate, Japan.
- (Invited
talk) K. J. Chen,
Technologies for III-N Heterogeneous Mixed-signal
Electronics," 10th
Int. Conf. on Nitride Semiconductors (ICNS-10),
Washington, DC, USA, Aug. 25-30, 2013.
- B. Li, K. J. Chen, Q.
Jiang, S. Liu, and C. Liu "Degradation of OFF-state leakage
current in AlGaN/GaN HEMTs induced by an ON-state gate
overdrive," 10th
Int. Conf. on Nitride Semiconductors (ICNS-10),
Washington, DC, USA, Aug. 25-30, 2013. (Outstanding poster award)
- S. Yang, J. Lu, S. Huang, C. Zhou, B. Huang, and K. J. Chen, "GaN
Buffer Traps in GaN-on-Si Structure Studied by
Thermally
Stimulated Current and Back-Gating Measurements," 10th
Int. Conf. on Nitride Semiconductors (ICNS-10),
Washington, DC, USA, Aug. 25-30, 2013.
- S. Huang,
K. Wei, X. Liu, G. Liu, B. Shen, and K. J. Chen,
"Improved High-Temperature Stability of 2DEG Channel in
AlGaN/GaN Heterostructures by PEALD-grown AlN Thin Film
Passivation," 10th
Int. Conf. on Nitride Semiconductors (ICNS-10),
Washington, DC, USA, Aug. 25-30, 2013.
- S. Yang, Q. Jiang, B. Li, Z. Tang and K. J. Chen, "GaN-to-Si Vertical
Conduction Mechanisms in AlGaNjGaN-on-Si
Lateral Heterojunction FET Structures," 10th
Int. Conf. on Nitride Semiconductors (ICNS-10),
Washington, DC, USA, Aug. 25-30, 2013.
- C. Liu, S.
Liu, S. Huang, B. Li, and K. J. Chen,
"AlN/GaN heteostructure TFTs with plasma enhanced atomic
layer deposition of epitaxial AlN thin film," 10th Int.
Conf. on Nitride Semiconductors (ICNS-10), Washington,
DC, USA, Aug. 25-30, 2013.
- Y. Wang, M. Wang, B. Xie, J. Wang, Y. Hao, W. Wu, B.
Shen, and K. J. Chen,
"High Performance Normally-Off AlGaN/GaN MOSFET with Al2O3
High-k Dielectric Layer Using a Low Damage Recess
Technique,"
10th
Int. Conf. on Nitride Semiconductors (ICNS-10),
Washington, DC, USA, Aug. 25-30, 2013.
- Q.
Jiang, C. Liu, Y. Lu, and K. J. Chen,
"High-voltage enhancement/depletion-mode AlGaN/GaN HEMTs on
modified SOI substrates," 2013 Int. Symp. On
Power Semiconductor Devices and ICs (ISPSD'13),
May 26-30, 2013, Kanazawa, Japan. (Charitat Award:
for the best Young Researcher)
- Z.
Tang, S. Huang, Q. Jiang, S. Liu, C. Liu, and K. J. Chen, "600
V high-performance AlGaN/GaN HEMTs with AlN/SiNx
passivation," 2013
Compound Semiconductor Manufacturing Technology Conference
CS MANTECH, Boston,
USA, Apr. 23-26, 2012. (Best student paper award)
- Z. Tang, S. Huang, Q.
Jiang, S Liu, C. Liu, and K. J. Chen, "600V 1.3mΩ∙cm2 Low-Leakage
Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx
Passivation," 2013 Int. Symp. On Power Semiconductor
Devices and ICs (ISPSD'13),
May 26-30, 2013, Kanazawa, Japan.
- Q. Zhou, W. Chen, S. Liu, B. Zhang, Z. Feng, S. Cai,
and K. J. Chen,
"High Breakdown Voltage InAlN/AlN/GaN HEMTs Achieved by
Schottky-Source Technology," 2013 Int. Symp. On Power Semiconductor
Devices and ICs (ISPSD'13),
May 26-30, 2013, Kanazawa, Japan.
- (Invited
talk) K. J. Chen,
"Device technology for GaN mixed-signal integrated
circuits," 5th Int.
Symp. On Advanced Plasma Science and its Applications for
Nitrides and Nanomaterials (ISPlasma2013), Jan. 28-Feb. 1,
2013, Nagoya University, Japan.
2012:
- A. M. H. Kwan, X. Liu, and K. J. Chen,
"Integrated gate-protected HEMTs and mixed-signal functional
blocks for GaN smart power ICs," 2012 Int. Electron Device
Meeting (IEDM2012), San Francisco, USA, Dec. 10-12, 2012.
- (Invited
talk) K. J. Chen,
L. Yuan, and H. Chen, "AlGaN/GaN metal-2DEG tunnel junction
FETs with normally-off operation, high on-state current and
low off-state leakage," 2012 IEEE Int. Conf. on Solid-State
and Integrated Circuit Technology (ICSICT2012), Xi'an,
CHINA, Oct. 29- Nov. 1, 2012.
- A. M. H. Kwan, Y. Guan, X. Liu, and K. J. Chen, "Over-temperature protection
integrated circuit for GaN smart power ICs," 2012 Int. Workshop on
Nitride Semiconductors (IWN2012), Oct. 14-19, 2012,
Sapporo, Japan.
- (Invited
talk) S. Yang, S. Huang, Q. Zhao, and K. J. Chen, "Enhancement-mode
AlGaN/GaN MISHEMTs with fluorinated high-k
LaLuO3
gate dielectric," 2012 Int. Workshop on
Nitride Semiconductors (IWN2012), Oct. 14-19, 2012, Sapporo,
Japan.
- S. Huang, Q. Jiang, S. Yang, Z. Tang, and K. J. Chen, "Mechanism of PEALD-grown AlN
passivation of AlGaN/GaN HEMTs," 2012 Int. Workshop on
Nitride Semiconductors (IWN2012), Oct. 14-19, 2012,
Sapporo, Japan.
- X. Liu,
C. Zhan, K. W. Chan, W. Liu, L. S. Tan, K. J. Chen and
Y.-C. Yeo, "AlGaN/GaN-on-Sapphire
MOS-HEMTs
with
breakdown voltage of 1400 V and on-state resistance of 22 mW∙cm2
using a CMOS-compatible gold-free process,"
2012
International Conference on Solid State Device and
Materials (SSDM2012),
Kyoto, Japan, Sep. 25-27, 2012.
- C.
Zhou, Q. Jiang, S. Huang, and K.
J. Chen, "Vertical leakage/breakdown mechanisms in
AlGaN/GaN-on-Si structure," 2012
Int. Symp. On Power Semiconductor Devices and ICs
(ISPSD'12),
Bruges, Belgium. June 4-7, 2012.
- S.
Huang, Q. Jiang, S. Yang, C. Zhou, and K.
J. Chen, "ALD-grown ultrathin AlN film for passivation
of AlGaN/GaN HEMTs," 2012 CS MANTECH, Boston, USA,
Apr. 23-26, 2012.
- X. Liu, C. Zhan, K.
W. Chan, W. Liu, L. S. Tan, K. J. Chen and Y.-C. Yeo, "AlGaN/GaN-on-Silicon MOS-HEMTs with Breakdown Voltage of 800 V and On-State Resistance of 3 mΩ.cm2 using a CMOS-Compatible Gold-Free Process," 2012
Int. Symp. on VLSI Technology, Systems, and Applications
(VLSI-TSA), Hsinchu, Taiwan, Apr. 23-25, 2012.
- (Invited) K. J. Chen, "Fluorine Plasma Ion Implantation: a GaN
Normally-off HEMT Technology" 4th
Int. Symp. On Advanced Plasma Science and its Application
for Nitrides and Nanomaterials (ISPlasma2012), Aichi,
Japan, Mar. 4-8, 2012.
2011:
- (Invited) K. J. Chen, L. Yuan, M.J. Wang*, H.
Chen, S. Huang*, C. Zhou, Q. Zhou, B.K.
Li, J. N. Wang, "Physics of Fluorine Plasma Ion Implantation
for GaN Normally-off HEMT Technology", 2011 Int. Electron
Device Meeting (IEDM), Washington D. C., USA, Dec.
4-7, 2011.
- Q. Zhou, S. Huang*, H. Chen, C. Zhou,
Z. Feng, S. Cai, K. J. Chen,
"Schottky Source/Drain Al2O3/InAlN/GaN
MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF
Current Ratio", 2011 Int. Electron Device Meeting
(IEDM), Washington D. C., USA, Dec. 4-7, 2011.
- Qi Zhou, Hongwei Chen, Chunhua Zhou, Z.H. Feng, S.J. Cai
and K. J. Chen, "InAlN/AlN/GaN Schottky
source/drain MIS-HEMT with high breakdown voltage," 2011 Int. Conf. on
Solid-State Devices and Materials (SSDM2011), Nagoya, Japan, Sep.
28-30, 2011.
- S. Huang, S. Yang, J.
Roberts, and K. J. Chen, "Characterization of
Vth-instability in Al2O3/GaN/AlGaN/GaN
MIS-HEMTs by quasi-static C-V measurement," 9th
Int. Conf. on Nitride Semiconductors (ICNS-9),
Glasgow, UK, July 10-15, 2011
- H. Chen, L. Yuan, Q. Zhou, C. Zhou, and K.
J. Chen, "Normally-off AlGaN/GaN Power Tunnel-Junction
FETs," 9th Int. Conf. on Nitride
Semiconductors (ICNS-9), Glasgow, UK, July 10-15,
2011.
- Q. Zhou, H. Chen, C. Zhou, Z. Feng,
S. J. Cai, and K. J. Chen, "Observation
Observation of Trap-Assisted Steep Sub-threshold Swing in
Schottky Source/Drain Al2O3/InAlN/GaN
MISHEMT," 69th Device Research Conference
(DRC), Santa Barbara, CA, USA, June 20-22, 2011.
- J. Fu, L.
Yobas, and K.J. Chen, "Stealth electrode
dielectrophoresis: Microsphere manipulation by patterned
2-Dimensional Electron Gas (2-DEG) in AlGaN/GaN
heterostructures," The 3rd International Symposium on
Microchemistry and Microsystems (ISMM), Seoul, Korea,
June 2-4, 2011, Abstract: F3-056.
- L. Yuan, H. Chen, Q. Zhou, C. Zhou, and K.
J. Chen, "A novel normally-off GaN power tunnel
junction FET," The 23rd Int. Symp. on Power Semiconductor Devices and
ICs (ISPSD'11), San Diego, USA, May 23-26, 2011.
- J. N. Lv,
Z. C. Yang, G. Z. Yan, Y. Cai, B. S. Zhang, and K. J.
Chen, "Characterization of GaN cantilevers fabricated
with GaN-on-Si platform," IEEE MEMS 2011. Jan. 23-27,
2011, Cancun, Mexico.
- (Invited) K. J.
Chen, "Role of Fluorine Plasma Ion Implantation in GaN
Electron Devices," SPIE Photonics West Conference, OPTO,
San Francisco, USA, Jan. 22-27, 2011.
2010:
- C. Ma, H. Chen, C. Zhou, S. Huang, L. Yuan, J.
Roberts, and K. J. Chen, "Reliability of
Enhancement-mode AlGaN/GaN HEMTs under ON-state Gate
Overdrive," 2010 Int. Electron
Device Meeting (IEDM), San Francisco, USA, Dec. 4-7, 2010.
- (Invited) K. J. Chen and C. Zhou "GaN
Smart Discrete Power Devices," The 10th Int.
Conf. on Solid-State and Integrated-Circuit Technology
(ICSICT08), Shanghai, China, Nov. 1-4, 2010.
- (Invited) K. J. Chen, "GaN Smart Power IC
Technologies," IEEE University Government Industry
Micro/Nano Symposium (UGIM 2010), Purdue University,
West Lafayette, IN, USA, June 28-July 1, 2010.
- (Invited) K. J. Chen, "Enhancement-mode
AlGaN/GaN HEMT and MIS-HEMT Technology," The 37th
Int. Symp. On Compound Semiconductors (ISCS2010),
Takamatsu Symbol Tower, Kagawa, Japan, May 31-June 4, 2010.
- A. M. H. Kwan, K. -Y. Wong, X. Liu, and K. J. Chen,
"High-Gain and High-Bandwidth AlGaN/GaN HEMT Comparator,"
2010 Int. Conf. on Solid-State Devices and Materials
(SSDM2010), Tokyo, Japan, Sep. 22-24, 2010.
- J. Fu and K.
J. Chen, "Microspheres
manipulation and sensing system by AlGaN/GaN 2DEG," Int.
Workshop on Nitride Semiconductors (IWN2010), Tampa,
Florida, USA, Sep. 19-24, 2010. (oral presentation)
- S. Huang, H. Chen, and K.
J. Chen, "Effects of the fluorine plasma treatment on
the surface potential and Schottky barrier height of
AlGaN/GaN heterostructures," Int. Workshop on Nitride
Semiconductors (IWN2010), Tampa, Florida, USA, Sep.
19-24, 2010. (oral presentation)
- B. K. Li,
M. J. Wang*, K. J.
Chen, J. N. Wang, "Electroluminenscence from forward
biased Ni/Au-AlGaN/GaN Schottky diodes," The 30th
Int. Conf. on the Physics of Semiconductors (ICPS 2010),
Seoul, Korea, July 25-30, 2010. (oral presentation)
- H. Chen, M. Wang*,
and K. J. Chen, "Self-Aligned Enhancement-mode
AlGaN/GaN HEMTs Using 25 keV Fluorine Ion Implantation," The
68th Device Research Conference (DRC10) ,
University of Notre Dame, South Bend, Indiana, USA, June
21-23, 2010.
- C. Zhou, W. J.
Chen*, E. L. Piner, and K. J. Chen, "Self-Protected
GaN Power Devices with Reverse Drain Blocking and Forward
Current Limiting Capabilities," The 22nd Int.
Symp. on Power Semiconductor Devices and ICs (ISPSD'10),
Hiroshima, Japan, June 6-10, 2010 (Charitat Award: for the best Young
Researcher)
- C. Zhou, W. J.
Chen*, E. L. Piner, and K. J. Chen, "AlGaN/GaN
Dual-Channel Lateral Field-Effect Rectifier with
Punch-through Breakdown Immunity and Low On-Resistance," 2010
Int. Conf. on Compound Semiconductor Manufacturing
Technology (CS MANTECH), Portland, Oregon, USA, May
7-10, 2010.
- H. Chen, M. Wang*,
and K. J. Chen,
"Enhancement-mode AlGaN/GaN HEMTs Fabricated by Standard
Fluorine Ion Implantation," 2010 Int. Conf. on Compound
Semiconductor Manufacturing Technology (CS MANTECH),
Portland, Oregon, USA, May 7-10, 2010.
- J.
N. Lv, Z.C. Yang, G.Z. Yan, Y. Cai, B.S. Zhang and K.J.
Chen, "Residual Stress Characterization of GaN
Microstructures Using Bent-Beam Strain Sensors," The 5th
Annual IEEE Int. Conf. on Nano/Micro Engineering and
Molecular Systems (IEEE-NEMS 2010), Xiamen, China,
Jan. 20-23, 2010.
2009:
- (Invited) K. J.
Chen, K. -Y.
Wong, W. J. Chen, C. Zhou, and X. Liu, "Device
Technology Platform for GaN Smart Power ICs," 2009 Int.
Electron Device and Material Symposium (IEDMS2009),
Taoyuan, Taiwan, Nov. 18-21, 2009.
- B. K. Li, M. J. Wang, K.
J. Chen, and J. N. Wang, "Electronluminescence
from a forward biased Ni/Au-AlGaN/GaN Schottky diode:
evidence of Femi level depinning at Ni/AlGaN interface," 8th
Int. Conf. on Nitride Semiconductors (ICNS-8), Jeju,
Korea, Oct. 18-23, 2009.
- K. -Y. Wong, W. J. Chen, X. Liu, C. Zhou, and
K. J. Chen, "GaN Smart Power IC Technology," 8th
Int. Conf. on Nitride Semiconductors (ICNS-8), Jeju,
Korea, Oct. 18-23, 2009.
- M. J. Wang, K. J.
Chen, C. Cheng, C. D. Beling, and S. Fung, "Modulation
of Polarization Induced Electric Field by Fluorine Ions in
AlGaN/GaN Heterostructures Revealed by Positron Annihilation
Spectroscopy," 8th Int. Conf. on Nitride Semiconductors
(ICNS-8), Jeju, Korea, Oct. 18-23, 2009.
- K. -Y. Wong, W. J. Chen, and K.
J. Chen, "GaN Zero-Bias RF Mixer Using a Lateral
Field-Effect Rectifier," 2009 Int. Conf. on Solid-State
Devices and Materials (SSDM2009),Sendai, Miyagi Japan,
Oct. 7-9, 2009.
- Q. Zhou, K. -Y. Wong, W. J. Chen, and K.
J. Chen, "Zero-Bias Microwave Detectors Using
AlGaN/GaN HEMT-Compatible Lateral Field-Effect Rectifier
(L-FER)," 8th Topical Workshop on Heterostructure
Microelectronics (TWHM2009), Mielparque-Nagano,
Nagano, Japan, Aug. 25-28, 2009.
- K. -Y. Wong, W. J. Chen, and K.
J. Chen, "Integrated Voltage Reference and Comparator
Circuits for GaN Smart Power Chip Technology," 2009 Int.
Symp.. on
Power Semiconductor Devices and ICs (ISPSD'09),
Barcelona, Spain, June 14-17, 2009. (Charitat Award: for the best Young
Researcher)
- K. -Y. Wong, W. J. Chen, and K.
J. Chen, "Wide Bandgap GaN Smart Power Chip
Technology," 2009 Int. Conf. on Compound Semiconductor
Manufacturing Technology (CS Matech'09), Tampa,
Florida, USA, May 18-21, 2009.
2008:
- W. Chen, K. -Y. Wong, and K.
J. Chen, "Monolithic Integration of Lateral Field
Effect Rectifier with Normally-off HEMT for GaN-on-Si
Switch-mode Power Supply Converters," 2008
Int. Electron Device Meeting (IEDM08), San
Francisco, USA, Dec. 15-17, 2008.
- M. Wang and K.
J. Chen, "Source Injection Induced Off-State Breakdown
and Its Improvement by Enhanced Back Barrier with Fluorine
Ion Implantation in AlGaN/GaN HEMTs," 2008 Int. Electron
Device Meeting (IEDM08), San Francisco, USA, Dec.
15-17, 2008.
- L. Yuan, M. Wang, and K.
J. Chen, "Atomistic Modeling of Fluorine Implantation
and Diffusion in III-Nitride Semiconductors," 2008 Int.
Electron Device Meeting (IEDM08), San Francisco, USA,
Dec. 15-17, 2008.
- (Invited) K. J.
Chen, "Threshold Voltage Control in AlGaN/GaN HEMTs by
Fluorine Plasma Ion Implantation: From Normally-ON to
Normally-OFF," 15th National Conference on
Compound Semiconductor: Materials, Microwave and
Optoelectronic Devices, Guangzhou, China, Dec. 1-2, 2008.
- (Invited) K. J.
Chen, "Fluorine Plasma Ion Implantation (Treatment)
Technology: a New Dimension in GaN Electronic Device
Processing," The 9th Int. Conf. on
Solid-State and Integrated-Circuit
Technology (ICSICT08), Beijing, China, Oct. 20-23,
2008.
- W. Chen, K. -Y. Wong, W.
Huang, and K.
J. Chen, "High
Temperature Operation of Normally-off AlGaN/GaN Power HEMTs
using CF4 Plasma Treatment," The 9th Int.
Conf. on Solid-State and Integrated-Circuit Technology
(ICSICT08), Beijing, China, Oct. 20-23, 2008.
- L. Yuan, M. Wang, and
K. J. Chen, "Molecular Dynamics Simulation Study on
Fluorine Plasma Ion Implantation in AlGaN/GaN
Heterostructures," The 9th
Int. Conf. on Solid-State and Integrated-Circuit
Technology (ICSICT08), Beijing, China, Oct. 20-23,
2008.
- W. Chen, K. -Y. Wong, and K.
J. Chen, "HEMT-Compatible Lateral Field Effect
Rectifier Using CF4 Plasma Treatment," 2008 Int.
Workshop on Nitride Semiconductors (IWN2008),
Montreux, Switzerland, Oct. 6-10, 2008.
- M. Wang, L. Yuan, F. Xu, B.
Shen, and K. J. Chen, "Study of Diffusion and
Thermal Stability of Fluorine Ions in GaN by Time-of-Flight
Secondary Ion Mass Spectroscopy," 2008 Int. Workshop on
Nitride Semiconductors (IWN2008), Montreux,
Switzerland, Oct. 6-10, 2008.
- L. Yuan, M. Wang, and K.
J. Chen, "On the Stability of Fluorine Ions in
AlGaN/GaN Heterostructures: a Molecular Dynamics Simulation
Study," 2008 Int. Workshop on Nitride Semiconductors
(IWN2008), Montreux, Switzerland, Oct. 6-10, 2008.
- K. -Y. Wong, W. Chen, and K.
J. Chen, "High Temperature Performance of AlGaN/GaN
HEMT-Compatible Lateral Field Effect Rectifier," 2008 Int. Conf. Solid-State Devices and
Materials (SSDM08), Tsukuba, Japan, Sep. 23-26, 2008.
- L. Yuan, M. Wang, and K.
J. Chen, "On the Stability of Fluorine Ions in
AlGaN/GaN System: a Theoretical Study," 2008 Int. Conf. Solid-State Devices and
Materials (SSDM08), Tsukuba, Japan, Sep. 23-26, 2008.
- W. Chen, W. Huang, K. Y. Wong, and K.
J. Chen, "High-Performance AlGaN/GaN HEMT-Compatible
Lateral Field-Effect Rectifiers," 66th Device Research
Conference (DRC), Santa Barbara, California, USA, June
22-25, 2008.
- J. Lv, Z.
Yang, and K. J. Chen, "Fabrication of Suspending GaN
Microstructures with Combinations of Anisotropic and
Isotropic Dry Etching Techniques," Proc. Of ASME Nano08,
Clear Water Bay, Hong Kong, Kowloon, Hong Kong, June 3-5,
2008.
- (Invited) K. J.
Chen, "Core Technologies for III-Nitride Integrated
Microsensors," 2008 HKUST Nanotechnology Workshop,
HKUST, Jan 23-25, 2008.
2007:
- C. Yi, R. Wang, W. Huang, T. C. -W.
Tang, K. M. Lau, and K. J. Chen, "Reliability of
Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine
Plasma Treatment," 2007 International Electron Device
Meeting (IEDM07), Washington D. C., USA, Dec. 10-12,
2007.
- B. K. Li, K. J.
Chen, K. M. Lau, W. Ge, and J. N. Wang,
"Characterization of Fluorine-Plasma Induced Deep Centers in
AlGaN/GaN Heterostructures," 7th Int. Conf.
Nitride Semiconductors (ICNS-7), Sep. 16-21, 2007, Las
Vegas, Nevada, USA.
- R. Wang, Y. C. Wu, W. C. -W. Tang, K. M. Lau, and K. J. Chen,
"Gain Improvement of Enhancement-mode AlGaN/GaN HEMT using
Dual-gate Architectures," 2007 Int. Conf. Solid-State
Devices and Materials (SSDM07), Tsukuba, Japan, Sep.
18-21, 2007.
- K. Y. Wong, W. C. -W.
Tang, K. M. Lau, and K. J. Chen, "Two-dimensional
Electron Gas (2DEG) IDT SAW Devices on AlGaN/GaN
Heterostructures," IEEE-NANO 2007, Hong Kong, Aug.
2-5, 2007.
- C. Wang, Z. Yang, B. Zhang,
Y. Wang, H. Wang, K. M. Lau, and K. J. Chen,
"Fabrication of Vertical Position-Controlled GaN Nanowires
on (111) Si Substrate," IEEE-NANO 2007, Hong Kong,
Aug. 2-5, 2007
- J. Liu, D. Song, Z. Cheng, W. C. -W
Tang, K. M. Lau, and K. J. Chen, "Microwave Noise
Characterization of Enhancement-mode AlGaN/GaN/InGaN/GaN
Double-Heterojunction HEMTs," IEEE 65th Device Research
Conference, South Bend, Indiana, USA, June 18-20,
2007, pp. 77-78.
- D.
Song, J. Liu, Z. Cheng, W. C. -W.
Tang, K. M. Lau, and K. J. Chen, "Normally-off
AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced
Breakdown Voltage and Suppressed Current Collapse," IEEE
19th Int. Symp. on Power
Semiconductor Devices & ICs (ISPSD'07), Jeju,
Korea, May 27-30, 2007, pp. 257-260.
- J.
Zhang, H. Zhang, K. J.
Chen, S. G. Lu, and Z. Xu, "Microwave Performance
Dependence of BST Thin Film Planar Interdigitated Varactors
on Different Substrate," IEEE Int. Conf. on Nano/Micro
Engineering and Molecular Systems (IEEE-NEMS 2007),
Bangkok, Thailand, Jan. 16-19, 2007.
- Z.
Yang, B. Zhang,
K. M. Lau, and K. J. Chen, "Fabrication of
Position-Controllable GaN Nanostructures," IEEE Int.
Conf. on Nano/Micro Engineering and Molecular Systems
(IEEE-NEMS 2007), Bangkok, Thailand, Jan. 16-19, 2007.
2006:
- R. N.
Wang, Y. Cai, Z. Cheng, C. W. Tang,
K. M. Lau, and K. J. Chen. "A Planar Integration
Process for E/D-mode AlGaN/GaN HEMT DCFL
Integrated Circuits," 2006 IEEE Compound Semiconductor
IC Symposium, San Antonio, USA, Nov. 12-15, 2006.
- R.
N. Wang, Y. Cai, Z. Cheng, C.-W. Tang,
K. M. Lau, and K. J. Chen, "Enhancement-Mode
AlGaN/GaN Metal Insulator Semiconductor HFETs Using
Fluoride-Based Plasma Treatment Technique" Int. Workshop
on Nitride Semiconductors (IWN2006), Kyoto, Japan,
Oct. 22-27, 2006.
- Z.
Yang, B. Zhang,
K. M. Lau, and K. J. Chen, "SiN-Masked
GaN-on-Patterned-Silicon (GPS) Technique for fabrication of
suspended GaN microstructures." The 8th
Int. Conf. Solid-State and Integrated-Circuit Technology
(ICSICT-2006), Shanghai, China, Oct. 23-26, 2006.
- J.
W. Zhang, Wai Cheong Hon, Lydia L. W. Leung, and K.
J. Chen, "Fabrication of Edge-Suspended Microwave
Passive Components using CMOS-Compatible Micromachining,"The
8th Int. Conf. Solid-State and Integrated-Circuit
Technology (ICSICT-2006), Shanghai, China, Oct.
23-26, 2006.
- K.-Y.
Wong, W.-Y. Tam,
and K. J. Chen, "Analysis of SAW Filter Fabricated
on Anisotropic Substrate Using Finite-Difference Time-Domain
Method," IEEE Ultrasonics Symposium, Vancouver,
Canada, Oct. 2-6, 2006. (oral presentation)
- K.-Y.
Wong, W. C. W.
Tang, K. M. Lau, and K. J. Chen, "Planar Integration
of SAW Filter with HEMT on AlGaN/GaN Heterostructure Using
Fluoride-based Plasma Treatment," IEEE Ultrasonics
Symposium, Vancouver, Canada, Oct. 2-6, 2006. (oral presentation).
- Y.
Cai, Z. Q. Cheng, W. C. -W.
Tang, K. M. Lau, and K. J. Chen, "GaN-based
Direct-Coupled FET Logic (DCFL) Digital Circuits Operating
at 375 oC," 2006 Int. Conf. on Solid State
Devices and Materials (SSDM 2006), Yokohama, Japan,
Sep. 12-15, 2006.
- R.
Wang, Y. Cai, C. -W.
Tang, K. M. Lau, and K. J. Chen, "Device Isolation
by Plasma Treatment for Planar Integration of E/D-mode
AlGaN/GaN HEMTs," 2006 Int. Conf. on Solid State Devices
and Materials (SSDM 2006), Yokohama, Japan, Sep.
12-15, 2006.
- H. Zhang and K.
J. Chen, "A Microstrip Bandpass Filter with an
Electronically Reconfigurable Transmission Zero," 2006
European Microwave Conference (EUMW2006), Manchester,
U. K., Sep. 10-15, 2006.
- (Invited) K. J. Chen and K. M. Lau, "Core
Technologies for III-Nitride Integrated Microsensors," 6th Emerging Information
Technology Conference (EITC'06), Richardson, Texas,
USA, Aug. 10-13, 2006.
- L. L. W. Leung
and K. J. Chen, "Compact On-Chip
Three-Dimensional Electromagnetic Bandgap Structure,"2006
IEEE International Microwave Symposium (IMS2006), San
Francisco, USA, June 6-11, 2006.
- C-W. Tang, L. Jiang, K. M. Lau, and K.
J. Chen, "MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs
on GaAs Substrates," 2006 Int. Conf. Compound
Semiconductor Manufacturing Technology (MANTECH'06),
Vancouver, Canada, Apr. 24-27, 2006, pp. 243-245.
2005:
- Z. Yang, R. Wang, D. Wang, B. Zhang.
K. J. Chen, and K. M. Lau, "GaN on Patterned Silicon
(GPS) Technique for GaN based Integrated Microsensors," 2005
International Electron Device Meeting (IEDM05),
Washington D. C., USA, Dec. 4-7, 2005.
- Y. Cai, Z.
Cheng, C. W. Tang, K. J. Chen, and K. M.
Lau, "Monolithic Integration of Enhancement- and
Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated
Circuits," 2005 International Electron Device Meeting
(IEDM05), Washington D. C., USA, Dec. 4-7, 2005.
- Z. Cheng, Y.
Cai, J. Liu, Y. G. Zhou, K. M. Lau, and K. J. Chen,
"Monolithic Integrated C-band Low Noise Amplifier Using
AlGaN/graded-AlGaN/GaN HEMTs," Proceeding of 2005
Asia-Pacific Microwave Conference (APMC2005), Suzhou,
China, Dev. 4-7, 2005.
- H. Zhang and K. J. Chen, "Compact Bandpass
Filters Using Slow-Wave Coplanar Waveguide Tri-Section
Stepped Impedance Resonators," Proceeding of 2005
Asia-Pacific Microwave Conference (APMC2005), Suzhou,
China, Dev. 4-7, 2005.
- H. Zhang, J. W.
Zhang, L. L. W. Leung, and K. J. Chen, "Bandpass and
Bandstop Filters Using CMOS-Compatible Micromachined
Edge-Suspended Coplanar Waveguides," Proceeding of 2005
Asia-Pacific Microwave Conference (APMC2005), Suzhou,
China, Dev. 4-7, 2005.
- J. Liu, Y. G.
Zhou, J. Zhu, K. J. Chen, and K. M. Lau,
"AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch," 6th Int.
Conf. on Nitride Semiconductors,(ICNS-6), Bremen,
Germany, Aug. 28-Sep. 2, 2005.
- Z. Yang, R.
Wang, S. Jia, D. Wang, B. Zhang, K. J. Chen, and K. M.
Lau, "Fabrication of Suspended GaN Microstructures Using GaN
on Patterned Silicon (GPS) Technique," 6th Int. Conf. on
Nitride Semiconductors,(ICNS-6), Bremen, Germany, Aug.
28-Sep. 2, 2005.
- J. Zhu, J. Liu, Y. G. Zhou, Y. Cai, K.
J. Chen, and K. M. Lau, "Reduced Gate-bias dependence
of 2DEG mobility in a Composite-Channel HEMT,"6th Int.
Conf. on Nitride Semiconductors,(ICNS-6), Bremen,
Germany, Aug. 28-Sep. 2, 2005.
- S. Jia, Y. Cai,
D. Wang, B. Zhang, K. J. Chen, and K. M.
Lau, "Enhancement-Mode AlGaN/GaN HEMTs on Silicon
Substrate,"6th Int. Conf. on Nitride
Semiconductors,(ICNS-6), Bremen, Germany, Aug. 28-Sep.
2, 2005.
- Z. Feng, S. J. Cai, K. J. Chen, and
K. M. Lau, "AlGaN/GaN HEMTs on Grooved Sapphire Substrate,"6th
Int. Conf. on Nitride Semiconductors,(ICNS-6),
Bremen, Germany, Aug. 28-Sep. 2, 2005.
- Y. Cai, Y. G.
Zhou, K. J. Chen, and K. M. Lau, "Enhancement-mode
AlGaN/GaN HEMTs with Low On-Resistance and Low
Knee-Voltage,"6th Topical Workshop on Heterostructure
Microelectronics, (TWHM2005), Awaji Island, Hyogo,
Japan, Aug. 22-25, 2005.
- (Invited) K. J. Chen, J. Liu, Y. G.
Zhou, and K. M. Lau, "Channel Engineering of III-Nitride
HEMTs for Enhanced Device Performance," 2005 Asia-Pacific
Workshop on Fundamental and Application of Advanced
Semiconductor Devices (AWAD05), Seoul, Korea, June
27-29, 2005.
- Y. Cai, Y. G. Zhou, K. J. Chen, and K. M.
Lau, "Threshold Voltage Control of AlGaN/GaN HEMTs by CF4
Plasma Treatment," 2005 Electronic Material Conference
(EMC2005), Santa Barbara, California, USA, June 22-24,
2005.
- M. Chen, W. Zhou, J. Zhu, Y. Cai, W. C. K.
Tang, K. J. Chen, and K. M. Lau, "Metamorphic
InP/GaAsSb/InP HBTs on GaAs substrate by MOCVD," 2005
Electronic Material Conference (EMC2005), Santa
Barbara, California, USA, June 22-24, 2005.
- Y. Cai, Y. G.
Zhou, K. J. Chen, and K. M. Lau, "Self-Aligned
Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-based Plasma
Treatment," 63rd Device Research Conference (DRC),
Santa Barbara, California, USA, June 20-22, 2005.
- Z. Yang, S.
Jia, R. Wang, D. Wang, K. J. Chen, and K. M. Lau, "GaN on
Patterned Silicon (GPS) Technique for Fabrication of
GaN-based MEMS," 13th Int. Conf. Solid-State Sensors,
Actuators, and Microsystems (TRANSDUCERS'05), Seoul,
Korea, June 5-9, 2005.
- C. S. Chu, Y. G. Zhou, K. J. Chen, and K. M.
Lau, "A novel RF High-Q metal-semiconductor-metal planar
inter-digitated varactor based on double-channel AlGaN/GaN
HEMT structure," 2005 IEEE Radio-Frequency Integrated
Circuit Symposium (RFIC2005), Long Beach, USA, June
12-14, 2005.
2004:
- J. Liu, Y. G.
Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M.
Lau,"Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs
with Enhanced Linearity," 2004 International Electron
Device Meeting (IEDM04), San Francisco, USA, Dec.
13-15, 2004.
- S. Jia, K. K.
P. Tsui, X. P. Liao, and K. J. Chen, "Characterization
and modeling of a step-gate-oxide MOSFET for RF power
amplifiers," The 7th Int. Conf. on Solid-State and
Integrated-Circuit Technology (ICSICT2004), Beijing,
China, Oct. 18-21, 2004.
- J. -W. Zhang,
W. C. Hon, L. L. W. Leung, and K. J. Chen, "Fabrication of
edge-suspended microwave passive components using
CMOS-compatible micromachining," The 7th Int. Conf. on
Solid-State and Integrated-Circuit Technology (ICSICT2004),
Beijing, China, Oct. 18-21, 2004.
- C. S. Chu, Y. G. Zhou, R. M. Chu, K. J.
Chen, and K. M. Lau, "GaN-based radio-frequency planar
inter-digitated metal-insulator-semiconductor varactors," The
7th Int. Conf. on Solid-State and Integrated-Circuit
Technology (ICSICT2004), Beijing, China, Oct. 18-21,
2004.
- M. Wong, N. Fok, N. Fan, K. W. Chan, and K.
J. Chen, "High-performance low-cost embedded inductors
using thin array plastic packaging (TAPP) for RF/microwave
applications, ," 2004 European Microwave Conference
(EuMW2004) , Amsterdam, Netherland, Oct. 12-14, 2004.
- L. L. W. Leung,
J. -W. Zhang, W. C. Hon, and K. J. Chen, "High-performance
CMOS-compatible micromachined edge-suspended coplanar
waveguides on low-resistivity silicon substrate," 2004
European Microwave Conference (EuMW2004) , Amsterdam,
Netherland, Oct. 12-14, 2004.
- J. -W. Zhang,
W. C. Hon, L. L. W. Leung, and K. J. Chen, "High-performance
edge-suspended spiral inductors and CPWs on CMOS-grade
silicon substrates,"2004 International Conference on
Microwave and Millimeter Wave Technology(ICMMT2004),
Beijing, China, Aug. 18-21, 2004.
- Y. G. Zhou, R. M. Chu, J. Liu, K.
J. Chen, and K. M. Lau,"Gate Leakage in AlGaN/GaN
HEMTs and its Suppression by Optimization of MOCVD Growth,"
2004 International Workshop on Nitride Semiconductors,
Pittsburgh, Pennsylvania, USA, July 19-23, 2004.
- R. M. Chu, Y. G. Zhou, J. Liu, K.
J. Chen, and K. M. Lau,"Reduction of Current Collapse
in an un-passivated AlGaN-GaN Double-Channel HEMT," 2004
Electronic Material Conference (EMC2004), Notre Dame,
Indiana, USA, June 23-25, 2004.
- D. Wang, S.
Jia, K. J. Chen, K. M. Lau, Y. Dikme,
P. van Gemmern, Y. C. Lin, and M. Heuken "Quantitative
Stress Characterization in GaN Films grown on patterned
Si(111) by Micro-Raman Spectroscopy," 2004 Electronic
Material Conference (EMC2004), Notre Dame, Indiana,
USA, June 23-25, 2004.
- W. C. Hon, J.
-W. Zhang, L. L. W. Leung, and K. J. Chen, "High-Q
CMOS-Compatible Micromachined Edge-suspended Inductors,"2004
IEEE Radio Frequency Integrated Circuits Symposium
(RFIC2004), Fort Worth, TX, USA, June 6-8, 2004.
- L. L. W. Leung and K. J. Chen, "Microwave
Characterization of High Aspect Ratio Through-Wafer
Interconnect Vias in Silicon substrates,"2004 IEEE
International Microwave Symposium (IMS2004), Fort
Worth, Texas, USA, June 6-11, 2004.
- D. Wang, Y.
Dikme, S. Jia, P. van Gemmern, Y. C. Lin, K. J. Chen,
K. M. Lau, and M. Heuken "Characterization of GaN grown on
patterned Si(111) substrate," 12th Int. Conference on
Metal Organic Vapor Phase Epitaxy (ICMOVPE-XII), Maui,
Hawaii, USA, May 30-June 4, 2004.
2003:
- T. Suligoj, H. Liu, J. K. O. Sin, K. Tsui,
K. J. Chen, P. Biljanovic, and K. L. Wang,"A Low-Cost
Horizontal Current Bipolar Transistor (HCBT) Technology for
the BiCMOS Integration with FinFETs,"IEEE Int.
Semiconductor Device Research Symposium, Washington
D. C., Dec. 10-12, 2003.
- L. L. W. Leung,
W. C. Hon, and K. J. Chen,"Low-loss CPW
Interconnects on Low-resistivity Silicon Substrate," Proceeding
of 2003 Asia-Pacific Microwave Conference (APMC2003),
pp. 1875-1878, Seoul, Korea, Nov. 4-7, 2003.
- L. L. W. Leung, T. W. Chen, S. W. Wong, M.
H. Chan, and K. J. Chen,"A 2 GHz Single-chip
Lumped-element Impedance Matching Network for RF Power
Amplifiers on Standard Silicon Substrate," Proceeding of
2003 Asia-Pacific Microwave Conference (APMC2003), pp.
1836-1839, Seoul, Korea, Nov. 4-7, 2003.
- B. P. Yan, E. S. Yang, Y. F. Yang, X. Q.
Wang, K. K. P. Tsui, and K. J. Chen,"RF Large Signal
Characterization of InGaP/GaAs Power Heterostructure-emitter
Bipolar Transistors," Proceeding of 2003 Asia-Pacific
Microwave Conference (APMC2003), pp. 209-212, Seoul,
Korea, Nov. 4-7, 2003.
- X. Huo, G. W. Xiao, K. J. Chen, and
P.C. H. Chan,"System-on-Organic Integration of a 2.4 GHz VCO
Using High Q Copper Inductors and Solder-bumped Flip Chip
Technology," Proceeding of 2003 IEEE Custom Integrated
Circuits Conference (CICC2003), San Jose, California,
USA, Sep. 21-24, 2003, pp. 537-540.
- Y.G. Zhou, R. M. Chu, K. J. Chen,
and K. M. Lau,"AlGaN/GaN/Graded-AlGaN double heterostructure
HEMT," 2003 Int. Conf. Solid-State Devices and Materials
(SSDM2003), Tokyo, Japan, Sep. 16-18, 2003, pp.
918-919.
- R. M. Chu, Y. G. Zhou, K. J. Chen,
and K. M. Lau,"Trap States Induced Frequency Dispersion of
AlGaN/GaN Heterostructure Field-Effect Transistors," 2003
Electronic Material Conference (EMC2003), Salt Lake
City, Utah, USA, June, 25-27, 2003, p.85.
- R. M. Chu, Y. G. Zhou, K. J. Chen,
and K. M. Lau,"Admittance Characterization and Analysis of
Trap States in AlGaN/GaN Heterostructures," 5th Int.
Conf. on Nitride Semiconductors, Nara, Japan, May
25-30, 2003, p. 275.
- X.P. Liao, K. Tsui, H. Liu, K. J. Chen,
and J. K. O. Sin,"A Step-Gate-Oxide SOI MOSFET for RF Power
Amplifiers in Short- and Medium-range Wireless
Applications," 2003 IEEE MTT-S Topical Meeting on
Silicon Monolithic Integrated Circuits in RF Systems
(SiRF2003), Grainau, Germany, pp. 33-36, April 9-11,
2003.
2002:
- K. Tsui, K. J. Chen, S. Lam, and M.
Chan, "RF Power Characteristics of Thin Film
Silicon-on-Sapphire MOSFET," 2002 Int. Conf. Solid State
Devices and Materials (SSDM'2002), Nagoya, Japan, Sep.
17-20, 2002, pp. 594-595.
- Lydia L. W. Leung, K. J. Chen, X.
Huo, and P.C.H. Chan, "On-Chip Microwave Filters on Standard
Silicon Substrates Incorporating a low-k BCB Dielectric
Layer," 2002 European Microwave Conference, Sep.
23-27, Milan, Italy.
- K. J. Chen, X. Huo, L. L. W. Leung, and
P.C.H. Chan, "High-performance microwave passive components
on silicon substrate," 3rd International Conference on
Microwave and Millimeter Wave Technology (ICMMT2002),
Aug. 17-19, Beijing, 2002, pp. 263-266.
- X. Huo, K. J. Chen, and P.C.H.
Chan, "High-Q copper inductors on standard silicon substrate
with a low-k BCB dielectric layer," Proceeding of 2002
IEEE RFIC Symposium, pp. 403-406, June 2-4, Seattle,
USA.