CHEN GROUP

Wide-Bandgap Semiconductor Electronics Laboratory (WISE-LAB)

Group Leader:

Prof. Kevin J. Chen

Current group members

Jiabei He, Ph.D student (B.S., Nankai University, China)

Yuru Wang, Ph.D student (B.S., M.S., University of Electronic Science and Technology, China)

Zheyang Zheng, Ph.D student (B.S. Zhejiang University, China)

Song Yang, Ph.D student (B.S. Xi an Jiaotong University, China)

Wenjie Song, Ph.D student (B.S. Xi an Jiaotong University, China)

Han Xu, Ph.D. student (B.S., University of Electronic Science and Technology, China)

Kailun Zhong, Ph.D. student (B.S., University of Electronic Science and Technology, China)

Jiahui Sun, Ph.D student (B.S. Xi an Jiaotong University, M.Sc. Zhejiang University, China)

Li Zhang, Ph.D student (B.S. and M.Sc. Xidian University, China)

Sirui Feng, Ph.D. student (B.S. and M.Sc., Zhejiang University, China)

Haochuan Qiu, Ph.D. student (B.S. Beijing Normal University, M.Sc. Tsinghua University, China)

Tao Chen, Ph.D. student (B.S., University of Electronic Science and Technology, China)


Former group members

Graduated Ph.D students:

 

Dr. Jiacheng Lei, Ph.D (2019) (B.S. University of Electronic Science and Technology, China), Currently with GlobalFoundries, Singapore. He received his Ph.D degree with a thesis entitled "Multifunctional GaN-on-Si Power Devices based on Double-Channel Heterostructure ".

 

Dr. Gaofei Tang, Ph.D (2018) (B.S. University of Electronic Science and Technology, China), Currently with Huawei Technologies, Shenzhen, China. He received his Ph.D degree with a thesis entitled "Application-Driven GaN Power Device Characterization and Power Integrated Circuit Development".

 

Dr. Qingkai Qian, Ph.D (2018) (B.S. Tsinghua University, Beijing, China), Currently a postdoc at Penn State University, USA. He received his Ph.D degree with a thesis entitled "Surface Functionalization and Device Applications of MoS2 and WSe2 Realized by Remote N2 Plasma Treatment".

 

Dr. Zhaofu Zhang, Ph.D (2018) (B.S. Nankai University, China), Currently a postdoc at Cambridge University, U. K. He received his Ph.D degree with a thesis entitled "Nitridation Effects on GaN Surface and Interface: First-Principles Calculation and Material/Device Characterization".

 

Dr. Ruiliang Xie, Ph.D. (2018) (B.S. and M.Sc., Xi'an Jiaotong University, China), currently with State Grid Corporation of China, Beijing, China, He received his Ph.D degree with a thesis entitled "Behavior Modeling and Analysis of E-Mode GaN Power Transistors and Their Dynamic Operation".

 

Dr. Mengyuan Hua, Ph.D (2017) (B.S. Tsinghua University), currently with HKUST, She is an assistant professor at Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China. She was awarded the Ph.D degree for her thesis entitled "Gate Dielectric Technology for High-Performance GaN Power MIS-HEMT and MIS-FET".

 

Dr. Jin Wei, Ph.D (2017) (B.S. Sun-Yat Sen University, M. S.  University of Electronic Science and Technology, China). He is now an assistant professor in Department of Microelectronics, Peking University, Beijing, China. He was awarded the Ph.D degree for his thesis entitled "Channel Engineering of Wide Bandgap Semiconductor Based Power Devices".

 

Dr. Xi Tang, Ph. D. (2016) (B. S. Nanjing University, M. S. Cornell University). Currently with Huawei Technologies, Shanghai, China. He was awarded the Ph.D degree for his thesis entitled "On-chip Photon Source on GaN Power Device Platform: Enhancing Dynamic Performance by Photon Pumping".

 

Dr. Hanxing Wang, Ph. D. (2016) (B. S. Zhejiang University). Currently with Huawei Technologies, Shenzhen, China. She was awarded the Ph.D degree for her thesis entitled "Normally-Off GaN Power Devices: Application-Driven Characterization, Implementation, and Integration".

 

Dr. Shenghou Liu, Ph. D. (2016) (B. S. Xidian University, M. S. Peking University). Currently with Xiamen San'an Integrated Circuits Co., Ltd. Xiamen, China. He was awarded the Ph.D degree for his thesis entitled "Development of Novel Normally-Off Al2O3/AlN/III-Nitride MOS-Channel-HEMTs and MIS-HEMTs".

 

Dr. Cheng Liu, Ph. D. (2016) (B. S., M. S. Huazhong University of Science and Technology), Currently with Xiamen San'an Integrated Circuits Co., Ltd. Xiamen, China. He was awarded the Ph.D degree for his thesis entitled "Advanced Processing Techniques for GaN Heterojunction Transistors".

 

Dr. Yunyou Lu, Ph.D. (2015) (B.S., Tsinghua University). He was first employed at DJI Technology Co., Shenzhen, China. He is now with Intel Corp., USA. He was awarded the Ph.D degree for his thesis entitled "Characterization Techniques for Gate and Passivation Dielectrics in GaN Power Devices".

 

Dr. Qimeng Jiang, Ph.D. (2014) (B.S., M.S., University of Electronic Science and Technology, China). He is with Huawei Technologies., Shenzhen, China. He was awarded the Ph.D degree for his thesis entitled "Development of Integration Technology and Investigation of Substrate Crosstalk for GaN-based Power ICs".


Dr. Zhikai Tang
, Ph.D. (2014) (B. S. University of Electronic Science and Technology, China). He is now the Director of Device Engineering, Efficient Power Conversion (EPC) Corp., USA. He was awarded the Ph.D. for his thesis entitled "Advanced Passivation Techniques for High-Voltage GaN Heterojunction Power Transistors".


Dr. Shu Yang,
Ph.D. (2014) (B.S., Fudan University). Currently a tenure-track professor (青年千人) with College of Electrical Engineering, Zhejiang University. She was awarded the Ph.D for her thesis entitled "Interface Engineering and Bulk Trap Investigations in GaN-on-Si Lateral Heterojunction Power Devices".


Dr. Alex Man Ho Kwan
, Ph.D. (2013) (B. S. Hong Kong University, M. Phil Hong Kong University of Science and Technology). Currently with R&D division of TSMC, Taiwan. He was awarded the Ph.D. for his thesis entitled "Integrated Gate-Protected HEMTs and Mixed-Signal Functional Blocks for GaN Smart Power ICs"

Dr. Hongwei Chen, Ph.D. (2012) (B. S. M.S, Peking University). First employment: Dynax Semiconductors Inc., Suzhou, China. Deceased. He was awarded the Ph.D. for his thesis entitled "Fabrication Technology and Device Simulation of Enhancement-mode AlGaN/GaN Transistors"

 

Dr. Chunhua Zhou, Ph.D. (2012) (B. S. M.S. University of Electronic Science and Technology, China). First employment: Efficient Power Conversion (EPC) Corp., USA. He is now with InnoScience (Zhuhai) Technologies, Zhuhai, China. He was awarded the Ph.D. for his thesis entitled "Performance Enhancement and Characterization Techniques for GaN-on-Si Power Devices"

 

Dr. Qi Zhou, Ph.D. (2012) (B. S. M.S. Xidian University, China). He is currently a professor in School of Microelectronics, University of Electronic Science and Technology, China (UESTC). He was awarded the Ph.D. for his thesis entitled "Schottky Source/Drain and High-K Gate Dielectric Technologies for High Performance InAlN/GaN Heterojunction Devices"

 

Dr. Li Yuan, Ph. D (2011), (B. S. Peking University). Li is currently with Institute of Microelectronics, Singapore. He is now with Shanghai Institute of Industry Research Institute, China. He was awarded the Ph.D. for his thesis entitled "Process Modeling and Device Technology for GaN Normally-off Power Transistors"

 

Dr. King Yuen Wong, Ph. D (2009), (B. S. and M. Phil, Hong Kong Polytechnique Univ.). He is currently with InnoScience (Zhuhai) Technologies, Zhuhai, China. He was awarded the Ph.D. for his thesis entitled "Device Technologies for GaN-based Sensing and Control ICs"

 

Dr. Ruonan (Reynold) Wang, Ph. D (2008), (B. S and M. S., Tsinghua Univ.), Reynold will join Applied Science and Technology Research Institute (ASTRI), working on advanced wireless modules. He is now with Huawei Technology, Shenzhen, China. He was awarded the Ph.D for his thesis entitled "Enhancement/Depletion-mode HEMT Technology for III-Nitride Mixed-Signal and RF Applications"

 

Dr. Hualiang (Bruce) Zhang, Ph.D (2007), (B.S. University of Science and Technology, China) Bruce is employed as a research assistant professor in University of Arizona, USA, from 2007 to 2009. In Aug. 2009, he has joined Department of Electrical Engineering, University of North Texas (Denton, Texas) as an assistant professor. He is now an associate professor in University of Massachusetts, Lowell, USA. He was awarded the Ph.D for his thesis entitled "Compact, Reconfigurable and Dual-band Microwave Circuits"

 

Dr. Jie Liu, Ph.D (2006), (B.S. and M.S. Nanjing University) Jie was first employed at Applied Science and Technology Research Institute (ASTRI), Hong Kong, working on advanced wireless modules. He is now with General Electric's Healthcare Division, Beijing. He was awarded the Ph.D for his thesis entitled "Channel Engineering of III-Nitride HEMTs for Enhanced Device Performance"

 

Dr. Lydia Lap Wai Leung, Ph.D (2005), (B.Eng. and M. Phil. HKUST) She first joined Applied Science and Technology Research Institute (ASTRI), Hong Kong, working on advanced wireless packaging. She is now CEO of Belun Technology, a startup company in Hong Kong. She was awarded the Ph.D for her thesis entitled "Low-loss On-chip Interconnects for Silicon Integrated Radio-Frequency and Microwave Systems"

 

M. Phil Students:

 

Xiaosen Liu, M. Phil. (2001), received his Ph.D degree from Texas A&M University. He is now in Intel Labs, Oregon, US. He was awarded the M. Phil for his thesis entitled "Integrated Circuit Applications of AlGaN/GaN HEMTs and Rectifiers"

Guan Yue, M. Phil (2011), currently with PricewaterhouseCooper Hong Kong. She was awarded the M. Phil for her thesis entitled "GaN-based Temperature Sensing and Over-temperature Protection ICs,"

Lei Chen, M.Phil. (2010), currently working in a private equity firm in Shanghai, China. He was awarded the M. Phil for his thesis entitled "Dielectric Passivation of AlGaN/GaN High Electron Mobility Transistor"

Congwen Yi, M. Phil (2008), received her Ph.D degree from Duke University, USA. She is now working in Apple, California, USA. She was awarded the M. Phil for her thesis entitled "Reliability Study of Enhancement-Mode AlGaN/GaN HEMT Fabricated with Fluorine Plasma Treatment Technology"

Song Tan, M. Phil (2008). Currently a research associate at City University of Hong Kong. She was awarded the M. Phil for her thesis entitled "Design of Compact and Dual-Band Microwave Microstrip Balun"

Di Song, M. Phil (2007), currently working in the banking sector of Hong Kong. He was awarded the M. Phil for his thesis entitled "III-Nitride Low-Density-Drain High Electron Mobility Transistors (LDD-HEMTs)"

Yichao Wu, M. Phil. (2007), he is now an telecom analyst in a bank in Shenzhen, China.  He was awarded the M. Phil for his thesis entitled "RF Circuit Applications of Enhancement-mode AlGaN/GaN HEMTs"

Shuo Jia, M. Phil (2005), He is currently employed at Radio Network R&D Center, Ericsson (China) Communications Company Ltd.He was awarded the M. Phil for his thesis entitled “AlGaN/GaN High Electron Mobility Transistors on Silicon Substrate for RF/Microwave Applications”.

"AlGaN/GaN High Electron Mobility Transistors on Silicon Substrate for RF/Microwave Applications"

William Chun San Chu, M. Phil (2005), now with Hong Kong Government. He was awarded the M. Phil for his thesis entitled "On-Chip Passive Components for GaN-based RFIC/MMIC Applications"

Kwong Fu Chan, M. Phil (2004), first job: RF engineer in Hong Kong, now with Hong Kong Government. He was awarded the M. Phil for his thesis entitled "Large-signal Characterization/Modeling and Linearization Techniques for RF Power Amplifiers"

Cheong Wai Hon, M. Phil (2004), first job: testing engineer in SAE Ltd. Hong Kong. He was awarded the M. Phil for his thesis entitled "CMOS-Compatible High-Performance Micromachined Edge-Suspended Inductors"

Rongming Chu, M. Phil (2004), now a Ph.D student in Univ. of California, Santa Barbara, USA. He was awarded the M. Phil for his thesis entitled "AlGaN-GaN Single- and Double-channel High Electron Mobility Transistors"

Kenneth K. P. Tsui, M. Phil (2003), first job: RF engineer in Vtech. Ltd. Hong Kong. He was awarded the M. Phil for his thesis entitled "RF Characterization and Modeling of MOSFET Power Amplifier in Wireless Communication"

 

Postdoc fellows and visiting scholars:

 

Dr. Jie Zhang, postdoc (Ph.D., Peking University, China)

Dr. Gang Lyu, postdoc (Ph.D., Tsinghua University, China)

Dr. Mengyuan Hua, postdoc (Ph.D., Hong Kong University of Science and Technology), now an assistant professor at Southern University of Science and Technology, Shenzhen, China.

Dr. Jin Wei, postdoc (Ph.D., Hong Kong University of Science and Technology), now an assistant professor at Peking University, Beijing, China.

Dr. Qilong Bao, Postdoctoral Fellow (B.S. Sichuan University, Ph.D, Institute of Microelectronics, Chinese Academy of Sciences), now with Huawei Technologies, Shanghai, China

Dr. Baikui Li, postdoc (Ph.D., Hong Kong University of Science and Technology), now an assistant professor in School of Optoelectronics, Shenzhen University, Shenzhen, China

Dr. Huang Sen, (Ph.D., Peking University), now an associate professor in Institute of Microelectronics, Chinese Academy of Science

Dr. Peng Liu, (Ph.D., Institute Neel, Centre National de la Recherche Scientifique (CNRS), Grenoble, FRANCE), now with Peking University

Dr. Maojun Wang, postdoc (Ph.D., Peking University). associate professor, Department of Microelectronics, Peking University

Ma Chenyue, exchange graduate student (B. S. Xidian University, received her Ph.D. degree from Peking University.

Dr. Duan Baoxing, postdoc (Ph.D., University of Electronic Science and Technology, China). He has joined the School of Microelectronics, Xidian University, Xi'an, China and is a full professor.

Dr. Fu Junxue, postdoc (Ph.D., University of Georgia). Now a research assistant professor in Hong Kong Baptist University.

Dr. Wanjun Chen, postdoc (Ph.D., University of Electronic Science and Technology, China). He is now a professor in School of Microelectronics, University of Electronic Science and Technology, China (UESTC), Chengdu, China.

Dr. Xiaohua Wang,  visiting scholar, (Ph.D, University of Electronic Science and Technology, China.). Now an associate professor at University of Electronic Science and Technology, China (UESTC), Chengdu, China.

Dr. Zhiqun Cheng, Research Associate, (Ph.D, Shanghai Institute of Microsystems and Information Technologies, CAS), now a Professor at Hangzhou Dian Zi University.

Dr. Yong Cai, Postdoc (Ph.D, Peking Univ.), first joined Applied Science and Technology Research Institute (ASTRI), Hong Kong. Now a professor at Suzhou Institute of Nano-tech and Bionics, Chinese Academy of Science.

Dr. Zhenchuan Yang, Postdoc (Ph.D, Peking Univ.), now Professor, Institute of Microelectronics, Peking University.

Dr. Deliang Wang, Postdoc, now Professor, University of Science and Technology, China.

Dr. Jinwen Zhang, Research Associate, she is now a professor at Institute of Microelectronics, Peking University.

Dr. Xiaoping Liao, Postdoc, now Professor, Dept. of EE, Southeast University, Nanjing, China.

Yanbin Shi, Visiting scholar (B.S. Shanghai Jiaotong University), In fall 2009, he joined University of Wisconsin, Madison as a Ph.D student. At HKUST, he worked on electro-thermal modeling of GaN power devices.