Patents Granted:

1. "Low Density Drain HEMTs"; Taiwan Patent No. 200733385, Sept. 1, 2007.
2. "Reliability Normally-Off III-Nitride Active Device Structures, and Related Methods and Systems"; Taiwan Patent No. 200915566, Apr. 1, 2009.
3. "Assembly, Method and System of Integrated HEMT and Lateral Field-Effect Rectifiers"; Taiwan Patent No. 201001669, Jan. 1, 2010.
4. "Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistorss"; US Patent No. 20100084687 A1. Apr. 8, 2010.
5. "低密度漏极HEMTs"; Chinese Patent No. 101336482 B, Dec. 1, 2010.
6. "Transistors and Rectifiers utilizing Hybrid Electrodes and Methods of Fabricating the Sames"; US Patent No. 20110018002 A1. Jan. 27, 2011.
7. "Transistors and Rectifiers Utilizing Hybrid Electrodes and Methods of Fabricating the Sames"; Taiwan Patent No. 201110345, Mar. 16, 2011.
8. "Enhancement-Mode III-N Devices, Circuits, and Methodss"; US Patent No. 7,932,539 B2. Apr. 26, 2011.
9. "Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HFETss"; US Patent No. 7,972,915 B2. Jul. 5, 2011.
10. "Low Density Drain HEMTss"; US Patent No. 8,044,432, B2 Oct. 25, 2011.
11. "Integrated HEMT and Lateral Field-Effect Rectifier Combination, Methods, and Systemss"; US Patent No. 8,076,699, Dec. 13, 2011.
12. "Normally-off III-Nitride Metal-2DEG Tunnel Junction Field-Effect Transistorss"; Taiwan Patent No. 201203541, Jan. 16, 2012.
13. "集成的HEMT和横向场效应整流器组合、方法及系统s"; Chinese Patent No. 101562182 B, Aug. 8, 2012.
14. "可靠的常关型Ⅲ-氮化物有源器件结构及相关方法和系统s"; Chinese Patent No. 101359686 B, Jan. 2, 2013.
15. "Reliable Normally-Off III-Nitride Active Device Structures, and Related Methods and Systemss"; US Patent No. 8,502,323 B2. Aug. 6, 2013.
16. "AlGaN/GaN高电子迁移率晶体管及在其中形成背势垒区域的方法s"; Chinese Patent No. 101714574 B, Jun. 18, 2014.
17. "Normally-Off III-Nitride Metal-2DEG Tunnel Junction Field-Effect Transistorss"; US Patent No. 8,809,987 B2. Aug. 19, 2014.
18. "Passivation of Group III-Nitride Heterojunction Devicess"; US Patent No. 8,937,336 B2 Jan. 20, 2015.
19. "Gate Protected Semiconductor Devicess"; US Patent No. 9,160,326 B2. Oct. 13, 2015.