In the press:

• "Tunneling through the power barrier"

• "Normally-off nitride semiconductor tunnel junction FET with high drive"

• "Fluorine: a fine dopant"

• "HKUST: GaN-on-Si integrated diode+transistor"

News:

• Li Yuan's work on normally-off AlGaN/GaN metal-2DEG tunnel junction FETs will be published in IEEE Electron Device Letters, March 2011. This work has also been featured in Compoundsemiconductor and Semiconductor Today

• Xiaosen Liu's work on GaN single polarity power supply comparator has been published in IEEE Electron Device letters, January 2011.

• Chenyue Ma presented the paper "Reliability of Enhancement-mode AlGaN/GaN HEMT under ON-state Gate Overdrive" in 2010 IEDM, Dec. 4-7. 2010, San Francisco, USA. This work is also featured in Semiconductor Today.

• Xiaosen Liu gave an oral presentation on at the 32nd IEEE Compound Semiconductor IC Symposium (CSICS), Oct. 3-6, 2010, Monterey, California, USA.

• Junxue Fu presented her paper "Microsphere manipulation and sensing system by AlGaN/GaN 2DEG," in the 2010 International Workshop on Nitride Semiconductors, Sep. 19-24, 2010, Tampa, USA.

• Sen Huang presented his paper "Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlGaN/GaN heterostructures," in the 2010 International Workshop on Nitride Semiconductors, Sep. 19-24, 2010, Tampa, USA.

• King Yuen Wong and Maojun Wang both had their papers published in IEEE Trans. Electron Devices, 2010.

• Former postdoc, Dr. Wanjun Chen has been promoted to associate professor at University of Electronic Science and Technology China.

• Chunhua's paper on "Self-Protected GaN Power Devices with Reverse Drain Blocking and Froward Current Limiting Capabilities," won the Charitat Award at The 22nd International Symposium on Power Semiconductor Devices and ICs (ISPSD'09), June 6-10, 2010, Hiroshima, Japan

• Chunhua Zhou's paper on dual-channel lateral field-effect rectifier has been published in IEEE Electron Device Letters, Jan. 2010.

• Wanjun Chen has returned to University of Electronic Science and Technology China as an assistant professor.

• King Yuen's paper on zero-bias microwave mixer has been published in IEEE Trans. Electron Devices, Dec. 2009

• In collaboration with Prof. Jiannong Wang's group, the work on Fermi-level's depinning at Ni/AlGaN has been published in Applied Physics Letters.

• King Yuen successfully defended his Ph.D thesis and will join TSMC to work on 22nm CMOS technology, July 2009.

• King Yuen's presentation on GaN smart power technology in ISPSD'09 (Barcelona, Spain) won the Charitat Award (for best student paper), June 2009.

• Wanjun Chen's paper on single-chip boost converter has been published in IEEE EDL, May 2009

• Maojun Wang's paper on fluorine incorporation in GaN has been published in Applied Physics Letters. April 2009

• Dec. 15-17, 2008: three papers are presented in 2008 International Electron Device Meeting (IEDM'08), San Francisco. Two of the papers are highlighted in Semiconductor Today.

• Wanjun's work on AlGaN/GaN HEMT-compatible lateral field-effect rectifier was reported on compound semiconductor net.